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Lee, B. G.; Doany, F. E.; Assefa, S.; Green, W.; Yang, M.; Schow, C. L.; Jahnes, C. V.; Zhang, S.; Singer, J.; Kopp, V. I.; Kash, J. A.; Vlasov, Y. A. |
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20-μm-pitch eight-channel monolithic fiber array coupling 160 Gb/s/channel to silicon nanophotonic chip |
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Conference Article |
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2010 |
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Conf. OFC/NFOEC |
Abbreviated Journal |
Conf. OFC/NFOEC |
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1-3 |
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spot size converters, SSC, optical waveguides, optical fiber waveguides, ultra-dense silicon waveguide arrays, silicon waveguides, waveguide arrays, from chiralphotonics |
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A multichannel tapered coupler interfacing standard 250-μm-pitch low-NA polarization-maintaining fiber arrays with ultra-dense 20-μm-pitch high-NA silicon waveguides is designed, fabricated, and tested, demonstrating coupling losses below 1 dB and injection bandwidths of 160 Gb/s/channel. |
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Conference on optical fiber communication, collocated national fiber optic engineers conference |
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852 |
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Elmanova, A.; An, P.; Kovalyuk, V.; Golikov, A.; Elmanov, I.; Goltsman, G. |
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Study of silicon nitride O-ring resonator for gas-sensing applications |
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Conference Article |
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2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1695 |
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012124 |
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silicon nitride O-ring resonator, ORR |
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In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously. |
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1742-6588 |
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1176 |
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Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Title |
Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver |
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Conference Article |
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2017 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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27 |
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4 |
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6 |
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Multi-pixel, HEB, silicon-on-insulator, horn array |
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We report on the development of a multi-pixel
Hot Electron Bolometer (HEB) receiver fabricated using
silicon membrane technology. The receiver comprises a
2 × 2 array of four HEB mixers, fabricated on a single
chip. The HEB mixer chip is based on a superconducting
NbN thin film deposited on top of the silicon-on-insulator
(SOI) substrate. The thicknesses of the device layer and
handling layer of the SOI substrate are 20 μm and 300 μm
respectively. The thickness of the device layer is chosen
such that it corresponds to a quarter-wave in silicon at
1.35 THz. The HEB mixer is integrated with a bow-tie
antenna structure, in turn designed for coupling to a
circular waveguide, |
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RPLAB @ kovalyuk @ |
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1111 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Silicon room temperature IR detectors coated with Ag2S quantum dots |
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Conference Article |
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2019 |
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Proc. IWQO |
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Proc. IWQO |
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369-371 |
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silicon detector, quantum dot, IR, surface states |
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For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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978-5-89513-451-1 |
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1154 |
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Trifonov, Andrey; Tong, C. Edward; Lobanov, Yury; Kaurova, Natalia; Blundell, Raymond; Gol’tsman, Gregory |
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An investigation of the DC and IF performance of silicon-membrane HEB mixer elements |
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Conference Article |
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2015 |
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Proc. 26th Int. Symp. Space Terahertz Technol. |
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Proc. 26th Int. Symp. Space Terahertz Technol. |
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40 |
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silicon-membrane HEB waveguide mixer |
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We report on our initial development towards a 2x2 multi-pixel HEB waveguide mixer for operation at 1.4 THz. We have successfully fabricated devices comprising an NbN bridge integrated with antenna test structure using a silicon membrane as the supporting substrate. DC measurements of the test chips demonstrate critical current from 0.1 – 1mA depending on the size of device, with T c of around 10 K and ΔTc ~ 0.8 K. |
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