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Author |
Hesler, J. L.; Crowe, T. W.; Bradley, R. F.; Pan, S. K.; Chattopadhyay, G. |
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Title |
The design, construction and evaluation of a 585 GHz planar Schottky mixer |
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Conference Article |
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Year |
1995 |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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34-43 |
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Pasadena, Ca |
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259 |
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Author |
van de Stadt, H. |
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Title |
An improved 1 THz waveguide mixer |
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Conference Article |
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Year |
1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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536 |
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Charlottesville, Virginia, USA |
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Probably other authors exist. |
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263 |
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Author |
Belitsky, V. Yu.; Kollberg, E. L. |
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Title |
Tuning circuit for NbN SIS mixer |
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Conference Article |
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Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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234 |
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Charlottesville, Virginia, USA |
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264 |
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Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
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Title |
The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
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Conference Article |
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Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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290-302 |
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NbN HEB mixers, fabrication process |
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We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Charlottesville, Virginia, USA |
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266 |
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Author |
Ellison, B. N.; Maddison, B. J.; Matheson, D. N.; Oldfield, M. L.; Marazita, S.; Crowe, T. W.; Maaskant, P.; Kelly, W. M. |
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Title |
First results for a 2.5 THz Schottky diode waveguide mixer |
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Conference Article |
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Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Volume |
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Pages |
494 |
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Charlottesville, Virginia, USA |
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265 |
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