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Author Khosropanah, P.; Gao, J. R.; Laauwen, W. M.; Hajenius, M; Klapwijk, T. M. openurl 
  Title Low noise NbN hot electron bolometer mixer at 4.3 THz Type Journal Article
  Year 2007 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 91 Issue Pages 221111 (1 to 3)  
  Keywords NbN HEB mixers, NbN, contacts cleaning  
  Abstract We have studied the sensitivity of a superconducting NbN hot electron bolometer mixer integrated with a spiral antenna at 4.3 THz. Using hot/cold blackbody loads and a beam splitter all in vacuum, we measured a double sideband receiver noise temperature of 1300 K at the optimum local oscillator (LO) power of 330 nW, which is about 12 times the quantum noise (hnu/2kB). Our result indicates that there is no sign of degradation of the mixing process at the superterahertz frequencies. Moreover, a measurement method is introduced which allows us for an accurate determination of the sensitivity despite LO power fluctuations.  
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  Notes Approved (up) no  
  Call Number Serial 584  
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Author Semenov, A. D.; Hübers, H.-W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M. url  doi
openurl 
  Title Design and performance of the lattice-cooled hot-electron terahertz mixer Type Journal Article
  Year 2000 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 88 Issue 11 Pages 6758-6767  
  Keywords HEB mixer, charge imbalance, HF current distribution  
  Abstract We present the measurements and the theoreticalmodel of the frequency-dependent noise temperature of a superconductor lattice-cooled hot-electron bolometer mixer in the terahertz frequency range. The increase of the noise temperature with frequency is a cumulative effect of the nonuniform distribution of the high-frequency current in the bolometer and the charge imbalance, which occurs at the edges of the normal domain and at the contacts with normal metal. We show that under optimal operation the fluctuation sensitivity of the mixer is determined by thermodynamic fluctuations of the noise power, whereas at small biases there appears additional noise, which is probably due to the flux flow. We propose the prescription of how to minimize the influence of the current distribution on the mixer performance.  
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  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved (up) no  
  Call Number Serial 306  
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Author Kardashev, N. S.; Andreyanov, V. V.; Buyakas, V. I.; Vinogradov, I. S.; Gvamichava, A. S.; Kotik, A. I.; Kurt, V. G.; Lazareva, G. S.; Mironova, E. N.; Myshonkova, N. V.; Slysh, V. I.; Trubnikov, A. G.; Troitskiy, V. F.; Puryaev, D. T.; Usyukin, V. I. openurl 
  Title The Millimetron project Type Conference Article
  Year 2000 Publication Proc. Lebedev Phys. Institute Abbreviated Journal  
  Volume 228 Issue Pages  
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  Notes Approved (up) no  
  Call Number RPLAB @ s @ MILLIMETRON_first Serial 308  
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Author Sergeev, A.; Mitin, V. url  doi
openurl 
  Title Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials Type Journal Article
  Year 2000 Publication Phys. Rev. B. Abbreviated Journal Phys. Rev. B.  
  Volume 61 Issue 9 Pages 6041-6047  
  Keywords disordered conductors, scattering potential, electron-phonon interaction  
  Abstract Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film.  
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  ISSN 0163-1829 ISBN Medium  
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  Notes Approved (up) no  
  Call Number Serial 307  
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Author Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H. doi  openurl
  Title NbN hot electron bolometric mixers for terahertz receivers Type Journal Article
  Year 2001 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 11 Issue 1 Pages 962-965  
  Keywords NbN HEB mixers  
  Abstract Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two.  
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  Notes Approved (up) no  
  Call Number Serial 312  
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