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Author (up) Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. url  openurl
  Title Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields Type Journal Article
  Year 1972 Publication Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников Abbreviated Journal Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников  
  Volume 6 Issue Pages 362-363  
  Keywords Ge, cyclotron resonance, quantizing magnetic fields  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1774  
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Author (up) Boreman, Glenn D. openurl 
  Title A Users guide to IR detectors Type Conference Article
  Year 2001 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 4420 Issue Pages 79-90  
  Keywords optical antennas  
  Abstract This paper will guide the first-time user toward proper selection and use of IR detectors for applications in industrial inspection, process control, and laser measurements.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 735  
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Author (up) Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. url  openurl
  Title On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data Type Journal Article
  Year 1996 Publication J. of Communications Technology and Electronics Abbreviated Journal J. of Communications Technology and Electronics  
  Volume 41 Issue 5 Pages 408-414  
  Keywords submillimeter waves, transmission  
  Abstract A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed.  
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  ISSN 1064-2269 ISBN Medium  
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  Notes Радиотехника и электроника 41, no. 4 (1996): 441-447 Approved no  
  Call Number Serial 1611  
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Author (up) Bryerton, E.; Percy, R.; Bass, R.; Schultz, J.; Oluleye, O.; Lichtenberger, A.; Ediss, G. A.; Pan, S. K.; Goltsman, G. N. url  doi
openurl 
  Title Receiver measurements of pHEB beam lead mixers on 3-μm silicon Type Conference Article
  Year 2005 Publication Proc. 30th IRMMW / 13th THz Abbreviated Journal Proc. 30th IRMMW / 13th THz  
  Volume Issue Pages 271-272  
  Keywords  
  Abstract We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz.  
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  Area Expedition Conference Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics  
  Notes Approved no  
  Call Number Serial 1460  
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Author (up) Budyanskij, M. Ya.; Sejdman, L. A.; Voronov, B. M.; Gubkina, T. O. url  openurl
  Title Increase of reproducibility in production of superconducting thin films of niobium nitride Type Journal Article
  Year 1992 Publication Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika  
  Volume 5 Issue 10 Pages 1950-1954  
  Keywords NbN films  
  Abstract Technique to control the composition of gas medium in the reactive magnetron discharge and the composition of the deposited films of niobium nitride using electrical parameters of discharge only, in particular, by δU = Up – Uar value at contant stabilized discharge current is described. Technique to select optimal condition for deposition of niobium nitride films when the films have composition meeting chemical formula, is suggested. Thin films of niobium nitride with up to 7 nm thickness and with rather high temperature of transition into superconducting state Tk > 10 K) and with low width of transition (δ < 0.6 K), are obtained. It is determined, that substrate material and dielectric sublayer do not affect. Tk value, while difference in coefficients of thermal expansion of substrate and of film affects δTk value.  
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  ISSN 0131-5366 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1675  
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