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Betz, A. L.; Borejko, R. T. |
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Title |
A practical Schottky mixer for 5 THz |
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Conference Article |
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1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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503 |
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269 |
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Hesler, J. L.; Hall, W. R.; Crowe, T. W.; Weikle, R. M.; Bradley, R. F.; Pan, Shing-Kuo |
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Title |
Submm wavelenght waveguide mixers using planar Schottky barier diods |
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Conference Article |
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Year |
1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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462 |
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270 |
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Tong, C. Y. E.; Blundell, R.; Bumble, B.; Stern, J. A.; LeDuc, H. G. |
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Title |
Sub-Millimeter distributed quasiparticle receiver employing a non-Linear transmission line |
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Conference Article |
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Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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47 |
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271 |
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Author |
Kroug, M.; Yagoubov, P.; Gol'tsman, G.; Kollberg, E. |
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Title |
NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies |
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Conference Article |
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Year |
1997 |
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Inst. Phys. Conf. Ser. |
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Inst. Phys. Conf. Ser. |
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1 |
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405-408 |
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NbN HEB mixers |
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Veldhoven |
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Bristol |
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0951-3248 |
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3rd Eur. Conf. on Applied Superconductivity |
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1600 |
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Cherednichenko, S.; Yagoubov, P.; Il'In, K.; Gol'tsman, G.; Gershenzon, E. |
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Title |
Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates |
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Conference Article |
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1997 |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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245-257 |
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NbN HEB mixers, fabrication process |
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Abstract |
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
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276 |
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