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Author Czerny, Carl; Germer, Heinrich
Title Selected pianoforte-studies. Edition nr. 300 Type Book Whole
Year 1900 Publication Abbreviated Journal
Volume Issue Pages
Keywords children, music, piano, learning, school
Abstract
Address
Corporate Author Thesis
Publisher Hansen Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial (down) 1845
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Author Калмыков, Б.; Фридкин, Г.
Title Сольфеджио. Часть 2. Двухголосие Type Book Whole
Year 1970 Publication Abbreviated Journal
Volume Issue Pages
Keywords children, music, piano, school, learning
Abstract
Address
Corporate Author Thesis
Publisher Музыка Place of Publication Москва Editor Дурандина, Е.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial (down) 1844
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Author Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I.
Title Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation Type Journal Article
Year 2021 Publication Adv. Electron. Mater. Abbreviated Journal Adv. Electron. Mater.
Volume 7 Issue 3 Pages 2000872
Keywords SWCNT transistors
Abstract The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2199-160X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial (down) 1843
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Author Sidorova, M.; Semenov, A.; Hübers, H.-W.; Kuzmin, A.; Doerner, S.; Ilin, K.; Siegel, M.; Charaev, I.; Vodolazov, D.
Title Timing jitter in photon detection by straight superconducting nanowires: Effect of magnetic field and photon flux Type Journal Article
Year 2018 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 98 Issue 13 Pages 134504 (1 to 14)
Keywords SNSPD, NbN namowires
Abstract We studied the effects of the external magnetic field and photon flux on timing jitter in photon detection by straight superconducting NbN nanowires. At two wavelengths 800 and 1560 nm, statistical distribution in the appearance times of photon counts exhibits Gaussian shape at small times and an exponential tail at large times. The characteristic exponential time is larger for photons with smaller energy and increases with external magnetic field while variations in the Gaussian part of the distribution are less pronounced. Increasing photon flux drives the nanowire from the discrete quantum detection regime to the uniform bolometric regime that averages out fluctuations of the total number of nonequilibrium electrons created by the photon and drastically reduces jitter. The difference between standard deviations of Gaussian parts of distributions for these two regimes provides the measure for the strength of electron-number fluctuations; it increases with the photon energy. We show that the two-dimensional hot-spot detection model explains qualitatively the effect of magnetic field.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9950 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial (down) 1842
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Author Kuzin, Aleksei; Elmanov, Ilia; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory
Title Silicon nitride focusing grating coupler for input and output light of NV-centers Type Conference Article
Year 2020 Publication Proc. 32-nd EMSS Abbreviated Journal Proc. 32-nd EMSS
Volume Issue Pages 349-353
Keywords NV-centers, focusing grating coupler
Abstract Here we presented the numerical results for the calculation of focusing grating coupler efficiency in the visible wavelength range. Using the finite element method, the optimal geometric parameters, including filling factor and grating period for a central wavelength of 637 nm, were found. Obtained results allow to input/output single-photon radiation from NV-centers, and can be used for research and development of a scalable on-chip quantum optical computing.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2724-0029 ISBN 978-88-85741-44-7 Medium
Area Expedition Conference 32nd European Modeling & Simulation Symposium
Notes Approved no
Call Number Serial (down) 1841
Permanent link to this record