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Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Yang, Z. Q.; Baryshev, A. M.; Barends, R.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G.; Callaos, N. |
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Title |
Twin-slot antenna coupled NbN hot electron bolometer mixers for space applications |
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Conference Article |
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Year |
2005 |
Publication |
Proc. 9-th WMSCI |
Abbreviated Journal |
Proc. 9-th WMSCI |
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Volume |
9 |
Issue |
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Pages |
148-153 |
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Keywords |
NbN HEB mixers |
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International Institute of Informatics and Systemics |
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9806560639, 9789806560635 |
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Conference |
9th World Multi-Conference on Systemics, Cybernetics and Informatics |
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no |
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1480 |
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Author |
Kuzin, Aleksei; Elmanov, Ilia; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
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Title |
Silicon nitride focusing grating coupler for input and output light of NV-centers |
Type |
Conference Article |
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Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
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Pages |
349-353 |
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Keywords |
NV-centers, focusing grating coupler |
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Abstract |
Here we presented the numerical results for the calculation of focusing grating coupler efficiency in the visible wavelength range. Using the finite element method, the optimal geometric parameters, including filling factor and grating period for a central wavelength of 637 nm, were found. Obtained results allow to input/output single-photon radiation from NV-centers, and can be used for research and development of a scalable on-chip quantum optical computing. |
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ISSN |
2724-0029 |
ISBN |
978-88-85741-44-7 |
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Conference |
32nd European Modeling & Simulation Symposium |
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no |
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Serial |
1841 |
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Author |
Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
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Title |
Integrated contra-directional coupler for NV-centers photon filtering |
Type |
Conference Article |
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Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
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Pages |
354-360 |
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Keywords |
NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings |
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Abstract |
We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds. |
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2724-0029 |
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978-88-85741-44-7 |
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32nd European Modeling & Simulation Symposium |
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no |
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1839 |
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Author |
Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
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Title |
Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds |
Type |
Conference Article |
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Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
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Issue |
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Pages |
344-348 |
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Abstract |
The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength. |
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NV-centers, nanodiamonds |
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2724-0029 |
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978-88-85741-44-7 |
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32nd European Modeling & Simulation Symposium |
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no |
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1840 |
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Author |
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Title |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
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Conference Article |
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Year |
2019 |
Publication |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
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Volume |
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Issue |
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Pages |
369-371 |
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Keywords |
silicon detector, quantum dot, IR, surface states |
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Abstract |
For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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978-5-89513-451-1 |
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Call Number |
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Serial |
1154 |
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