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Author Gol'tsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Smirnov, Konstantin V.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M. doi  openurl
  Title NbN phonon-cooled hot-electron bolometer mixer for terahertz heterodyne receivers Type Conference Article
  Year 2005 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 5727 Issue Pages 95-106  
  Keywords NbN HEB mixers  
  Abstract We present the results of our studies of NbN phonon-cooled HEB mixers at terahertz frequencies. The mixers were fabricated from NbN film deposited on a high-resistivity Si substrate with an MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 x 0.2 μm2 active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. The largest gain bandwidth of 5.2 GHz was achieved for a mixer based on 2 nm thick NbN film deposited on MgO layer over Si substrate. The gain bandwidth of the mixer based on 3.5 nm NbN film deposited on Si with MgO is 4.2 GHz and the noise bandwidth for the same device amounts to 5 GHz. We also present the results of our research into decrease of the direct detection contribution to the measured Y-factor and a possible error of noise temperature calculation. The use of a square nickel cell mesh as an IR-filter enabled us to avoid the effect of direct detection and measure apparent value of the noise temperature which was 16% less than that obtained using conventional black polyethylene IR-filter.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Terahertz and Gigahertz Electronics and Photonics IV  
  Notes Approved no  
  Call Number Serial 378  
Permanent link to this record
 

 
Author Ozhegov, R.; Elezov, M.; Kurochkin, Y.; Kurochkin, V.; Divochiy, A.; Kovalyuk, V.; Vachtomin, Y.; Smirnov, K.; Goltsman, G. doi  openurl
  Title Quantum key distribution over 300 Type Conference Article
  Year 2014 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 9440 Issue Pages 1F (1 to 9)  
  Keywords SSPD, SNSPD applicatins, quantum key distribution, QKD  
  Abstract We discuss the possibility of polarization state reconstruction and measurement over 302 km by Superconducting Single- Photon Detectors (SSPDs). Because of the excellent characteristics and the possibility to be effectively coupled to singlemode optical fiber many applications of the SSPD have already been reported. The most impressive one is the quantum key distribution (QKD) over 250 km distance. This demonstration shows further possibilities for the improvement of the characteristics of quantum-cryptographic systems such as increasing the bit rate and the quantum channel length, and decreasing the quantum bit error rate (QBER). This improvement is possible because SSPDs have the best characteristics in comparison with other single-photon detectors. We have demonstrated the possibility of polarization state reconstruction and measurement over 302.5 km with superconducting single-photon detectors. The advantage of an autocompensating optical scheme, also known as “plugandplay” for quantum key distribution, is high stability in the presence of distortions along the line. To increase the distance of quantum key distribution with this optical scheme we implement the superconducting single photon detectors (SSPD). At the 5 MHz pulse repetition frequency and the average photon number equal to 0.4 we measured a 33 bit/s quantum key generation for a 101.7 km single mode ber quantum channel. The extremely low SSPD dark count rate allowed us to keep QBER at 1.6% level.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Orlikovsky, A. A.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference International Conference on Micro- and Nano-Electronics  
  Notes Approved no  
  Call Number RPLAB @ sasha @ ozhegov2014quantum Serial 1048  
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Author Sidorova, Maria V.; Divochiy, Alexander V.; Vakhtomin, Yury B.; Smirnov, Konstantin V. doi  openurl
  Title Ultrafast superconducting single-photon detector with a reduced active area coupled to a tapered lensed single-mode fiber Type Journal Article
  Year 2015 Publication J. Nanophoton. Abbreviated Journal  
  Volume 9 Issue 1 Pages 093051  
  Keywords SSPD, SNSPD  
  Abstract This paper presents an ultrafast niobium nitride (NbN) superconducting single-photon detector (SSPD) with an active area of 3×3  μm2 that offers better timing performance metrics than the previous SSPD with an active area of 7×7  μm2. The improved SSPD demonstrates a record timing jitter (<25  ps), an ultrashort recovery time (<2  ns), an extremely low dark count rate, and a high detection efficiency in a wide spectral range from visible part to near infrared. The record parameters were obtained due to the development of a new technique providing effective optical coupling between a detector with a reduced active area and a standard single-mode telecommunication fiber. The advantages of the new approach are experimentally confirmed by taking electro-optical measurements.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1934-2608 ISBN Medium  
  Area Expedition Conference  
  Notes 10.1117/1.JNP.9.093051 Approved no  
  Call Number RPLAB @ sasha @ Serial 1052  
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Author Samsonova, Alena; Zolotov, Philipp; Baeva, Elmira; Lomakin, Andrey; Titova, Nadezhda; Kardakova, Anna; Goltsman, Gregory doi  openurl
  Title Signatures of surface magnetic disorder in thin niobium films Type Journal Article
  Year 2021 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume Issue Pages 1-1  
  Keywords Temperature measurement, Temperature dependence, Superconducting magnets, Superconducting transition temperature, Substrates, Resistance, Scattering  
  Abstract We present our studies on the evolution of the normal and superconducting properties with thickness of thin Nb films with a low level of non-magnetic disorder (kFl 150 for the thickest film in the set). The analysis of the superconducting behavior points to the presence of magnetic moments, hidden in the native oxide on the surface of Nb films. Using the Abrikosov-Gorkov theory, we obtain the density of surface magnetic moments of 1013 cm-2, which is in agreement with the previously reported data for Nb films.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1162  
Permanent link to this record
 

 
Author Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. doi  openurl
  Title Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver Type Conference Article
  Year 2017 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 27 Issue 4 Pages 6  
  Keywords Multi-pixel, HEB, silicon-on-insulator, horn array  
  Abstract We report on the development of a multi-pixel

Hot Electron Bolometer (HEB) receiver fabricated using

silicon membrane technology. The receiver comprises a

2 × 2 array of four HEB mixers, fabricated on a single

chip. The HEB mixer chip is based on a superconducting

NbN thin film deposited on top of the silicon-on-insulator

(SOI) substrate. The thicknesses of the device layer and

handling layer of the SOI substrate are 20 μm and 300 μm

respectively. The thickness of the device layer is chosen

such that it corresponds to a quarter-wave in silicon at

1.35 THz. The HEB mixer is integrated with a bow-tie

antenna structure, in turn designed for coupling to a

circular waveguide,
 
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1111  
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