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| Author | Gao, J. R.; Hovenier, J. N.; Yang, Z. Q.; Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Klapwijk, T. M.; Adam, A. J. L.; Klaassen, T. O.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L. | ||||
| Title | Terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer | Type | Journal Article | ||
| Year | 2005 | Publication | Appl. Phys. Lett. | Abbreviated Journal | |
| Volume | Issue | 86 | Pages | ||
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| Notes | art.num. 244104 | Approved | no | ||
| Call Number | RPLAB @ s @ qc_lasers_gao | Serial | 368 | ||
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| Author | Richards, P. L.; Shen, T. M.; Harris, R. E.; Lloyd, F. L. | ||||
| Title | Quasiparticle heterodyne mixing in SIS tunnel junctions | Type | Journal Article | ||
| Year | 1979 | Publication | Appl. Phys. Lett. | Abbreviated Journal | |
| Volume | 34 | Issue | 5 | Pages | 345-347 |
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| Notes | Approved | no | |||
| Call Number | MSPU @ s @ SIS_mixing_qua_part_Richards_1979 | Serial | 222 | ||
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| Author | Jackson, B. D.; Baryshev, A. M.; de Lange, G.; Gao, J. R.; Shitov, S. V.; Iosad, N. N.; Klapwijk, T. M. | ||||
| Title | Low-noise 1 THz superconductor-insulator-superconductor mixer incorporating a NbTiN/SiO2/Al tuning circuit | Type | Journal Article | ||
| Year | 2001 | Publication | Appl. Phys. Lett. | Abbreviated Journal | |
| Volume | 79 | Issue | 3 | Pages | 436 |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ s @ sis_Jackson_2001 | Serial | 314 | ||
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| Author | Swetz, D. S.; Bennett, D. A.; Irwin, K. D.; Schmidt, D. R.; Ullom, J. N. | ||||
| Title | Current distribution and transition width in superconducting transition-edge sensors | Type | Journal Article | ||
| Year | 2012 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 101 | Issue | Pages | 242603 | |
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| Abstract | Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition. | ||||
| Address | TES, current distribution | ||||
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| Notes | Recommended by Klapwijk | Approved | no | ||
| Call Number | Serial | 930 | |||
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| Author | Floet D. W.; Gao J. R.; Klapwijk T. M.; de Korte P. A. J. | ||||
| Title | Bias Dependence of the Thermal Time Constant in Nb Superconducting Diffusion-Cooled HEB Mixers | Type | Journal Article | ||
| Year | 2000 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 77 | Issue | Pages | 1719 | |
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| Abstract | We present an experimental study of the intermediate frequency bandwidth of a Nb diffusion-cooled hot-electron bolometer mixer for different bias voltages. The measurements show that the bandwidth increases with increasing voltage. Analysis of the data reveals that this effect is mainly caused by a decrease of the intrinsic thermal time of the mixer and that the effect of electrothermal feedback through the intermediate frequency circuit is small. The results are understood using a qualitative model, which takes into account the different effective diffusion constants in the normal and superconducting domains. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ atomics90 @ | Serial | 971 | ||
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| Author | Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. | ||||
| Title | Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation | Type | Journal Article | ||
| Year | 2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 103 | Issue | 18 | Pages | 181121 (1 to 5) |
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carbon nanotubes, CNT, THz radiation, SiO2 substrate | ||||
| Abstract | We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. | ||||
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1171 | |||
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| Author | Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. | ||||
| Title | The electron-phonon relaxation time in thin superconducting titanium nitride films | Type | Journal Article | ||
| Year | 2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 103 | Issue | 25 | Pages | 252602 (1 to 4) |
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disordered TiN films, electron-phonon relaxation time | ||||
| Abstract | We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors. The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 941 | ||
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| Author | Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. | ||||
| Title | Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors | Type | Journal Article | ||
| Year | 2018 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 112 | Issue | 14 | Pages | 141101 (1 to 5) |
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graphene field effect transistors, FET | ||||
| Abstract | Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs. D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1309 | |||
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| Author | Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V. | ||||
| Title | Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures | Type | Journal Article | ||
| Year | 2001 | Publication | Appl. Phys. Lett. | Abbreviated Journal | |
| Volume | 79 | Issue | Pages | 2049-2051 | |
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HEB detector, FIR, far infrared | ||||
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| Call Number | RPLAB @ s @ heb_eph_interaction_Gershenzon | Serial | 315 | ||
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| Author | Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. | ||||
| Title | Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers | Type | Journal Article | ||
| Year | 2016 | Publication | Appl. Phys. Lett. | Abbreviated Journal | |
| Volume | 109 | Issue | 13 | Pages | 132602 |
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HEB mixer, contacts | ||||
| Abstract | We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1107 | |||
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