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Ferrari, S.; Kahl, O.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. |
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Title |
Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires |
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Journal Article |
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2015 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
106 |
Issue |
15 |
Pages |
151101 (1 to 5) |
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SSPD, SNSPD |
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We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents.
W. H. P. Pernice acknowledges support by the DFG Grant Nos. PE 1832/1-1 and PE 1832/1-2 and the Helmholtz society through Grant No. HIRG-0005. The Ph.D. education of O. Kahl is embedded in the Karlsruhe School of Optics and Photonics (KSOP). G. N. Goltsman acknowledges support by Russian Federation President Grant HШ-1918.2014.2 and Ministry of Education and Science of the Russian Federation Contract No.: RFMEFI58614X0007. A. Korneev acknowledges support by Statement Task No. 3.1846.2014/k. V. Kovalyuk acknowledges support by Statement Task No. 2327. We also acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) and the State of Baden-Württemberg through the DFG-Center for Functional Nanostructures (CFN) within subproject A6.4. We thank S. Kühn and S. Diewald for the help with device fabrication as well as B. Voronov and A. Shishkin for help with NbN thin film deposition and A. Semenov for helpful discussion about the detection mechanism of nanowire SSPD's.
The authors declare no competing financial interests. |
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Smirnov, K. V.; Divochiy, A. V.; Vakhtomin, Y. B.; Sidorova, M. V.; Karpova, U. V.; Morozov, P. V.; Seleznev, V. A.; Zotova, A. N.; Vodolazov, D. Y. |
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Title |
Rise time of voltage pulses in NbN superconducting single photon detectors |
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Journal Article |
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Year |
2016 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
109 |
Issue |
5 |
Pages |
052601 |
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SSPD, SNSPD |
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We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector Rn, which appears after photon absorption, on its kinetic inductance Lk and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model.
D.Yu.V. acknowledges the support from the Russian Foundation for Basic Research (Project No. 15-42-02365). K.V.S. acknowledges the financial support from the Ministry of Education and Science of the Russian Federation (Contract No. 3.2655.2014/K). |
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1236 |
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Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A. |
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Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm |
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2010 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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97 |
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13 |
Pages |
131907 (1 to 3) |
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SSPD, SNSPD, InAsP/InP quantum dots |
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By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364. |
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1238 |
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Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. |
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Title |
Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors |
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Journal Article |
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2018 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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112 |
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14 |
Pages |
141101 (1 to 5) |
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graphene field effect transistors, FET |
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Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.
D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions. |
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1309 |
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Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Egorov, A. Y.; Knyazev, D. A.; Andrianov, A. V.; Zakhar’in, A. O.; Konnikov, S. G.; Gol’tsman, G. N. |
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A weakly coupled semiconductor superlattice as a potential for a radio frequency modulated terahertz light emitter |
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Journal Article |
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2012 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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100 |
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13 |
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131104 (1 to 4) |
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semiconductor superlattice |
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The bolometer response to THz radiation from a weakly coupled GaAs/AlGaAs superlattice biased in the self-oscillations regime has been observed. The bolometer signal is modulated with the frequency equal to the fundamental frequency of superlattice self-oscillations. The frequency spectrum of the bolometer signal contains higher harmonics whose frequency is a multiple of fundamental frequency of self-oscillations.
This work was supported by State Contracts Nos. 16.740.11.0044 and 16.552.11.7002 of Ministry of Education and Science of the Russian Federation. Structural characterization was made on the equipment of the Joint Research Centre «Material science and characterization in advanced technology» (Ioffe Institute, St. Petersburg, Russia). |
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1379 |
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Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. |
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Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)] |
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2010 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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96 |
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8 |
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089901 |
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SSPD, SNSPD, erratum |
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A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered. |
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1395 |
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Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. |
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Single-photon experiments at telecommunication wavelengths using nanowire superconducting detectors |
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2007 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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91 |
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3 |
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031106 (1 to 3) |
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SSPD, SNSPD, APD |
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The authors report fiber-coupled superconducting single-photon detectors with specifications that exceed those of avalanche photodiodes, operating at telecommunication wavelength, in sensitivity, temporal resolution, and repetition frequency. The improved performance is demonstrated by measuring the intensity correlation function g(2)(τ) of single-photon states at 1300nm produced by single semiconductor quantum dots.
This work was supported by Swiss National Foundation through the “Professeur borsier” and NCCR Quantum Photonics program, FP6 STREP “SINPHONIA” (Contract No. NMP4-CT-2005-16433), IP “QAP” (Contract No. 15848), NOE “ePIXnet,” and the Italian MIUR-FIRB program. |
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Erratum: 1395 |
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Ejrnaes, M.; Cristiano, R.; Quaranta, O.; Pagano, S.; Gaggero, A.; Mattioli, F.; Leoni, R.; Voronov, B.; Gol’tsman, G. |
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A cascade switching superconducting single photon detector |
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2007 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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Volume |
91 |
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26 |
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262509 (1 to 3) |
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SSPD, SNSPD, parallel-wire |
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We have realized superconducting single photon detectors with reduced inductance and increased signal pulse amplitude. The detectors are based on a parallel connection of ultrathin NbN nanowires with a common bias inductance. When properly biased, an absorbed photon induces a cascade switch of all the parallel wires generating a signal pulse amplitude of 2mV. The parallel wire configuration lowers the detector inductance and reduces the response time well below 1ns.
This work was performed in the framework of the EU project “SINPHONIA” NMP4-CT-2005-016433. |
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1418 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. |
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Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate |
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2007 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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91 |
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6 |
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062504 (1 to 3) |
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NbN films, nanofilms |
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The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
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Kerman, A. J.; Dauler, E. A.; Yang, J. K. W.; Rosfjord, K. M.; Anant, V.; Berggren, K. K.; Gol’tsman, G. N.; Voronov, B. M. |
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Constriction-limited detection efficiency of superconducting nanowire single-photon detectors |
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2007 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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90 |
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10 |
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101110 (1 to 3) |
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SSPD, SNSPD |
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We investigate the source of the large variations in the observed detection efficiencies of superconducting nanowire single-photon detectors between many nominally identical devices. Through both electrical and optical measurements, we infer that these variations arise from “constrictions:” highly localized regions of the nanowires where the effective cross-sectional area for superconducting current is reduced. These constrictions limit the bias-current density to well below its critical value over the remainder of the wire, and thus prevent the detection efficiency from reaching the high values that occur in these devices when they are biased near the critical current density.
This work is sponsored by the United States Air Force under Contract No. FA8721-05-C-0002. |
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