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Hocker, L. O.; Sokoloff, D. R.; Daneu, V.; Szoke, A.; Javan, A. |
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Frequency mixing in the infrared and far-infrared using a metal-to-metal point contact diode |
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1968 |
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Applied Physics Letters |
Abbreviated Journal |
Appl Phys Lett |
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12 |
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12 |
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Keywords |
optical antennas |
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Abstract  |
Metalâ€toâ€metal point contact diodes were used to obtain the 54â€GHz beat notes between two adjacent 10.6â€μ CO2 laser transitions. The speed of the diodes in the farâ€infrared is at least 1000 GHz. This was tested with a 337â€μ HCN laser. |
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RPLAB @ gujma @ |
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742 |
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Yates, S. J. C.; Baryshev, A. M.; Baselmans, J. J. A.; Klein, B.; Güsten, R. |
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Title |
Fast Fourier transform spectrometer readout for large arrays of microwave kinetic inductance detectors |
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Journal Article |
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2009 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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95 |
Issue |
4 |
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3 |
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Microwave kinetic inductance detectors have great potential for large, very sensitive detector arrays for use in, for example, submillimeter imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing ~1000 s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of fast Fourier transform spectrometer readout, showing no deterioration of the noise performance compared to the low noise analog mixing while allowing high multiplexing ratios. |
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RPLAB @ gujma @ |
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697 |
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Tanner, M. G.; Natarajan, C. M.; Pottapenjara, V. K.; O'Connor, J. A.; Warburton, R. J.; Hadfield, R. H.; Baek, B.; Nam, S.; Dorenbos, S. N.; Bermúdez Ureña, E.; Zijlstra, T.; Klapwijk, T. M.; Zwiller, V. |
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Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon |
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2010 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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96 |
Issue |
22 |
Pages |
3 |
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Keywords |
SNSPD |
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Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter. |
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RPLAB @ gujma @ |
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655 |
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Walther, Christoph; Scalari, Giacomo; Faist, Jerome; Beere, Harvey; Ritchie, David |
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Low frequency terahertz quantum cascade laser operating from 1.6 to 1.8 THz |
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2006 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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89 |
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231121(1-3) |
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QCL, 360 uW at 1.6 THz |
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The authors report a GaAs/Al0.1Ga0.9As quantum cascade laser based on a bound-to-continuum transition optimized for low frequency operation. High tunability of the gain curve is achieved by the Stark effect and laser emission is measured between 1.6 and 1.8 THz. Pulsed mode operation up to 95 K and continuous wave operation up to 80 K are reported. The dynamical range in current is as high as 43%. |
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629 |
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Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. |
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Title |
Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers |
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Journal Article |
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2009 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
95 |
Issue |
19 |
Pages |
3 |
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Keywords |
2DEG |
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The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s. |
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RPLAB @ gujma @ |
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673 |
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