| Records |
Author  |
An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K. |
| Title |
Infrared phototransistor using capacitively coupled two-dimensional electron gas layers |
Type |
Journal Article |
| Year |
2005 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
86 |
Issue |
|
Pages |
172106 - 172106-3 |
| Keywords |
2DEG |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
RPLAB @ akorneev @ |
Serial |
603 |
| Permanent link to this record |
| |
|
| |
| Author |
Baek, Burm; Lita, Adriana E.; Verma, Varun; Nam, Sae Woo |
| Title |
Superconducting a-WxSi1–x nanowire single-photon detector with saturated internal quantum efficiency from visible to 1850 nm |
Type |
Journal Article |
| Year |
2011 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
98 |
Issue |
25 |
Pages |
3 |
| Keywords |
SNSPD |
| Abstract |
We have developed a single-photon detector based on superconducting amorphous tungsten–silicon alloy (a-WxSi1–x) nanowire. Our device made from a uniform a-WxSi1–x nanowire covers a practical detection area (16 μm×16 μm) and shows high sensitivity featuring a plateau of the internal quantum efficiencies, i.e., efficiencies of generating an electrical pulse per absorbed photon, over a broad wavelength and bias range. This material system for superconducting nanowire detector technology could overcome the limitations of the prevalent nanowire devices based on NbN and lead to more practical, ideal single-photon detectors having high efficiency, low noise, and high count rates. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
RPLAB @ gujma @ |
Serial |
665 |
| Permanent link to this record |
| |
|
| |
| Author |
Barends, R.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M. |
| Title |
Current-induced vortex unbinding in bolometer mixers |
Type |
Journal Article |
| Year |
2005 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
87 |
Issue |
|
Pages |
263506 (1 to 3) |
| Keywords |
HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile |
| Abstract |
We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
604 |
| Permanent link to this record |
| |
|
| |
| Author |
Burke, P. J.; Schoelkopf, R. J.; Prober, D. E.; Skalare, A.; Karasik, B. S.; Gaidis, M. C.; McGrath, W. R.; Bumble, B.; Leduc, H. G. |
| Title |
Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers |
Type |
Journal Article |
| Year |
1998 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
72 |
Issue |
12 |
Pages |
1516-1518 |
| Keywords |
HEB mixer; thermal fluctuation noise; TFN |
| Abstract |
A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band). |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
RPLAB @ gujma @ |
Serial |
760 |
| Permanent link to this record |
| |
|
| |
| Author |
Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. |
| Title |
Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers |
Type |
Journal Article |
| Year |
2009 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
95 |
Issue |
19 |
Pages |
3 |
| Keywords |
2DEG |
| Abstract |
The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
RPLAB @ gujma @ |
Serial |
673 |
| Permanent link to this record |
