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Dorenbos, S. N.; Reiger, E. M.; Perinetti, U.; Zwiller, V.; Zijlstra, T.; Klapwijk, T. M. |
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Title |
Low noise superconducting single photon detectors on silicon |
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Journal Article |
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Year |
2008 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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93 |
Issue |
13 |
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131101 |
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0003-6951 |
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RPLAB @ s @ |
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436 |
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Author |
Floet, D. Wilms; Baselmans, J. J. A.; Klapwijk, T. M.; Gao, J. R. |
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Title |
Resistive transition of niobium superconducting hot-electron bolometer mixers |
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Journal Article |
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Year |
1998 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
73 |
Issue |
19 |
Pages |
2826 |
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Keywords |
HEB |
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0003-6951 |
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543 |
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Fu, K.; Zannoni, R.; Chan, C.; Adams, S. H.; Nicholson, J.; Polizzi, E.; Yngvesson, K. S. |
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Title |
Terahertz detection in single wall carbon nanotubes |
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Journal Article |
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Year |
2008 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
92 |
Issue |
3 |
Pages |
033105 |
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Keywords |
HEB, single wall, carbon nanotube, CNT, SWNT, SWCNT, terahertz detection, THz |
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It is reported that terahertz radiation from 0.69 to 2.54 THz has been sensitively detected in a device consisting of bundles of carbon nanotubes containing single wall metallic carbon nanotubes, quasioptically coupled through a lithographically fabricated antenna, and a silicon lens. The measured data are consistent with a bolometric detection process in the metallic tubes and the devices show promise for operation well above 4.2 K. |
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0003-6951 |
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NEP is not shown |
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no |
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566 |
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Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A. |
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Title |
Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications |
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Journal Article |
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2010 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
97 |
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15 |
Pages |
3 |
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Keywords |
SSPD |
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We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K. |
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RPLAB @ gujma @ |
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681 |
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Author |
Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. |
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Title |
Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers |
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Journal Article |
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Year |
2001 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
79 |
Issue |
15 |
Pages |
2483-2485 |
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0003-6951 |
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311 |
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