| Records |
| Author |
An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K. |
| Title |
Infrared phototransistor using capacitively coupled two-dimensional electron gas layers |
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Journal Article |
| Year |
2005 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
86 |
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172106 - 172106-3 |
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2DEG |
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RPLAB @ akorneev @ |
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603 |
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Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. |
| Title |
Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers |
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Journal Article |
| Year |
2009 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
95 |
Issue |
19 |
Pages |
3 |
| Keywords |
2DEG |
| Abstract |
The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s. |
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RPLAB @ gujma @ |
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673 |
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Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio |
| Title |
Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation |
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Journal Article |
| Year |
2010 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
97 |
Issue |
2 |
Pages |
3 |
| Keywords |
Annealing |
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We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing. |
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Annealing |
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RPLAB @ gujma @ |
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691 |
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Zwiller, Vale<cc><81>ry; Blom, Hans; Jonsson, Per; Panev, Nikolay; Jeppesen, Sören; Tsegaye, Tedros; Goobar, Edgard; Pistol, Mats-Erik; Samuelson, Lars; Björk, Gunnar |
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Single quantum dots emit single photons at a time: Antibunching experiments |
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Journal Article |
| Year |
2001 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
78 |
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17 |
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2476 |
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antibunching, quantum dot |
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0003-6951 |
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502 |
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Rodriguez-Morales, F.; Zannoni, R.; Nicholson, J.; Fischetti, M.; Yngvesson, K. S.; Appenzeller, J. |
| Title |
Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube |
Type |
Journal Article |
| Year |
2006 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
89 |
Issue |
8 |
Pages |
083502 |
| Keywords |
carbon nanotube, GHz heterodyne detector, direct detector |
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0003-6951 |
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565 |
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