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Galeazzi, Massimiliano |
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Title  |
Fundamental noise processes in TES devices |
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Journal Article |
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Year |
2011 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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21 |
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3 |
Pages |
267-271 |
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Keywords |
TES, Johnson noise, phonon noise, excess noise, flux-flow noise, thermal fluctuation noise |
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Abstract |
Microcalorimeters and bolometers are noise-limited devices, therefore, a proper understanding of all noise sources is essential to predict and interpret their performance. In this paper, I review the fundamental noise processes contributing to Transition Edge Sensor (TES) microcalorimeters and bolometers and their effect on device performance. In particular, I will start with a simple, monolithic device model, moving to a more complex one involving discrete components, to finally move to today's more realistic, comprehensive model. In addition to the basic noise contribution (equilibrium Johnson noise and phonon noise), TES are significantly affected by extra noise, which is commonly referred to as excess noise. Different fundamental processes have been proposed and investigated to explain the origin of this excess noise, in particular near equilibrium non-linear Johnson noise, flux-flow noise, and internal thermal fluctuation noise. Experimental evidence shows that all three processes are real and contribute, at different levels, to the TES noise, although different processes become important at different regimes. It is therefore time to discard the term “excess noise” and consider these terms part of the “fundamental noise processes” instead. |
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Recommended by Klapwijk |
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914 |
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Pearlman, A.; Cross, A.; Slysz, W.; Zhang, J.; Verevkin, A.; Currie, M.; Korneev, A.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol’tsman, G.; Sobolewski, R. |
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Title |
Gigahertz counting rates of NbN single-photon detectors for quantum communications |
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Journal Article |
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Year |
2005 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
15 |
Issue |
2 |
Pages |
579-582 |
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Keywords |
NbN SSPD, SNSPD |
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Abstract |
We report on the GHz counting rate and jitter of our nanostructured superconducting single-photon detectors (SSPDs). The devices were patterned in 4-nm-thick and about 100-nm-wide NbN meander stripes and covered a 10-/spl mu/m/spl times/10-/spl mu/m area. We were able to count single photons at both the visible and infrared telecommunication wavelengths at rates of over 2 GHz with a timing jitter of below 18 ps. We also present the model for the origin of the SSPD switching dynamics and jitter, based on the time-delay effect in the phase-slip-center formation mechanism during the detector photoresponse process. With further improvements in our readout electronics, we expect that our SSPDs will reach counting rates of up to 10 GHz. An integrated quantum communications receiver based on two fiber-coupled SSPDs and operating at 1550-nm wavelength is also presented. |
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1558-2515 |
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1465 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. |
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Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies |
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1999 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3757-3760 |
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NbN HEB mixers |
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The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB. |
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1051-8223 |
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1569 |
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Karasik, B. S.; Milostnaya, I. I.; Zorin, M. A.; Elantev, A. I.; Gol'tsman, G. N.; Gershenzon, E. M. |
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Title |
High speed current switching of homogeneous YBaCuO film between superconducting and resistive states |
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Journal Article |
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Year |
1995 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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5 |
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2 |
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3042-3045 |
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YBCO HTS HEB switches |
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Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively. |
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1051-8223 |
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1620 |
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Karasik, B. S.; Gol'tsman, G. N.; Voronov, B. M.; Svechnikov, S. I.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Yngvesson, K. S. |
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Title |
Hot electron quasioptical NbN superconducting mixer |
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Journal Article |
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Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
5 |
Issue |
2 |
Pages |
2232-2235 |
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Keywords |
NbN HEB mixers |
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Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform. |
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1051-8223 |
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1622 |
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