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Author Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H. doi  openurl
  Title NbN hot electron bolometric mixers for terahertz receivers Type Journal Article
  Year 2001 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 11 Issue 1 Pages 962-965  
  Keywords NbN HEB mixers  
  Abstract Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two.  
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  Notes Approved no  
  Call Number Serial 312  
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Author Skalare, A.; McGrath, William R.; Echternach, P. M.; Leduc, H. G.; Siddiqi, I.; Verevkin, A.; Prober, D. E. doi  openurl
  Title Aluminum hot-electron bolometer mixers at submillimeter wavelengths Type Journal Article
  Year 2001 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 11 Issue 1 Pages 641-644  
  Keywords Al HEB mixer, contacts, interface, in situ, in-situ, Aluminium HEB mixer  
  Abstract Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz-frequency spectroscopy within astrophysics. Al HEB mixers offer operation with an order of magnitude less local oscillator power, higher intermediate frequency bandwidth and potentially lower noise than competing devices made from other materials. We report on mixer experiments at 618 GHz with devices fabricated from films with sheet resistances in the range from about 55 Ω down to about 9 Ω per square. Intermediate frequency bandwidths of up to 3 GHz were measured (1 μm long device), with absorbed local oscillator power levels of 0.5 to 6 nW and mixer conversion up to -21.5 dB. High input coupling efficiency implies that the electrons in the device are able to thermalize before escaping from the device. It was found that the long coherence length complicates mixer operations due to the proximity of the contact pads. Also, saturation at the IF frequency may be a concern for this type of device, and warrants further studies.  
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  ISSN 1051-8223 ISBN Medium  
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  Notes Approved no  
  Call Number ref919426b Serial 1061  
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Author Gupta, D.; Kadin, A. M. doi  openurl
  Title Single-photon-counting hotspot detector with integrated RSFQ readout electronics Type Journal Article
  Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 9 Issue 2 Pages 4487-4490  
  Keywords RSFQ, SSPD, SNSPD  
  Abstract Absorption of an infrared photon in an ultrathin film (such as 10-nm NbN) creates a localized nonequilibrium hotspot on the submicron length scale and sub-ns time scale. If a strip /spl sim/1 /spl mu/m wide is biased in the middle of the superconducting transition, this hotspot will lead to a resistance pulse with amplitude proportional to the energy of the incident photon. This resistance pulse, in turn, can be converted to a current pulse and inductively coupled to a SQUID amplifier with a digitized output, operating at 4 K or above. A preliminary design analysis indicates that this data can be processed on-chip, using ultrafast RSFQ digital circuits, to obtain a sensitive infrared detector for wavelengths up to 10 /spl mu/m and beyond, with bandwidth of 1 GHz, that counts individual photons and measures their energy with 25 meV resolution. This proposed device combines the speed of a hot-electron bolometer with the single-photon-counting ability of a transition-edge microcalorimeter, to obtain an infrared detector with sensitivity, speed, and spectral selectivity that are unmatched by any alternative technology.  
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  Notes Approved no  
  Call Number Serial 1080  
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Author Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. doi  openurl
  Title Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ Type Journal Article
  Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 9 Issue 2 Pages 3216-3219  
  Keywords RSFQ, NbN, SIS  
  Abstract A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches).  
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  Call Number Serial 1081  
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Author Loudkov, D.; Tong, C. Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G. openurl 
  Title An investigation of the performance of the superconducting HEB슠mixer as a function of its RF슠embedding impedance Type Journal Article
  Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 15 Issue 2 Pages 472-475  
  Keywords HEB mixer  
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  Publisher IEEE Place of Publication Editor  
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  Notes Approved no  
  Call Number Serial 371  
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Author Torgashin, M. Yu.; Koshelets, V. P.; Dmitriev, P. N.; Ermakov, A. B.; Filippenko, L. V.; Yagoubov, P. A. openurl 
  Title Superconducting integrated receivers based on Nb-AlN-NbN circuits Type Journal Article
  Year 2007 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 17 Issue 2 Pages 379-382  
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  Notes Approved no  
  Call Number RPLAB @ s @ mix_SIR_ieee_trans_2007 Serial 406  
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Author Hans Ekstrom; Karasik, Boris S.; Kollberg, Erik L.; Sigfrid Yngvesson openurl 
  Title Conversion gain and noise of niobium superconducting hot–electron–mixers Type Journal Article
  Year 1995 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 43 Issue 4 Pages 938-947  
  Keywords Nb HEB mixers  
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  Notes Approved no  
  Call Number Serial 254  
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Author Karpov, A.; Blondel, J.; Voss, M.; Gundlach, K. H. openurl 
  Title A three photon noise SIS heterodyne receiver at submillimeter wavelength Type Journal Article
  Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 9 Issue 2 Pages 4456-4459  
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  Notes Approved no  
  Call Number RPLAB @ s @ sis_Karpov_1999 Serial 300  
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Author Shitov, S. V.; Levitchev, M.; Veretennikov, A. V.; Koshelets, V. P.; Prokopenko, G. V.; Filippenko, L. V.; Ermakov, A. B.; Shtanyuk, A. M.; Kohlstedt, H.; Ustinov, A. V. openurl 
  Title Superconducting integrated receiver as 400-600 GHz tester for coolable devices Type Journal Article
  Year 2001 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 11 Issue 1 Pages 832-835  
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  Call Number RPLAB @ s @ sis_Shitov_2001 Serial 313  
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Author Yang, J. K. W.; Kerman, A. J.; Dauler, E. A.; Anant, V.; Rosfjord, K. M.; Berggren, K. K. openurl 
  Title Modeling the electrical and thermal response of superconducting nanowire single-photon detectors Type Journal Article
  Year 2007 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 17 Issue 2 Pages 581 - 585  
  Keywords SSPD, modeling  
  Abstract We modeled the response of superconducting nanowire single-photon detectors during a photodetection event, taking into consideration only the thermal and electrical properties of a superconducting NbN nanowire on a sapphire substrate. Our calculations suggest that heating which occurs after the formation of a photo-induced resistive barrier is responsible for the generation of a measurable voltage pulse. We compared this numerical result with experimental data of a voltage pulse from a slow device, i.e. large kinetic inductance, and obtained a good fit. Using this electro-thermal model, we estimated the temperature rise and the resistance buildup in the nanowire, and the return current at which the nanowire becomes superconducting again. We also show that the reset time of these photodetectors can be decreased by the addition of a series resistance and provide supporting experimental data. Finally we present preliminary results on a detector latching behavior that can also be explained using the electro-thermal model.  
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  Notes Approved no  
  Call Number Serial 625  
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