| Records |
| Author |
Hajenius, M.; Baselmans, J. J. A.; Baryshev, A.; Gao, J. R.; Klapwijk, T. M.; Kooi, J. W.; Jellema, W.; Yang, Z. Q. |
| Title |
Full characterization and analysis of a terahertz heterodyne receiver based on a NbN hot electron bolometer |
Type |
Journal Article |
| Year |
2006 |
Publication |
J. Appl. Phys. |
Abbreviated Journal  |
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| Volume |
100 |
Issue |
7 |
Pages |
074507 |
| Keywords |
HEB |
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| ISSN |
0021-8979 |
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no |
| Call Number |
RPLAB @ s @ |
Serial |
385 |
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| Author |
de Lange, G.; Kuipers, J. J.; Klapwijk, T. M.; Panhuyzen, R. A.; van de Stadt, H.; de Graauw, M. W. M. |
| Title |
Superconducting resonator circuits at frequencies above the gap frequency |
Type |
Journal Article |
| Year |
1995 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
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| Volume |
77 |
Issue |
4 |
Pages |
1795-1804 |
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no |
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Serial |
257 |
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| Author |
Kooi, J. W.; Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Dieleman, P.; Baryshev, A.; de Lange, G. |
| Title |
IF impedance and mixer gain of NbN hot electron bolometers |
Type |
Journal Article |
| Year |
2007 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
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| Volume |
101 |
Issue |
4 |
Pages |
044511 |
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0021-8979 |
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no |
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RPLAB @ s @ |
Serial |
445 |
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| Author |
Burke, P. J.; Schoelkopf, R. J.; Prober, D. E.; Skalare, A.; Karasik, B. S.; Gaidis, M. C.; McGrath, W. R.; Bumble, B.; LeDuc, H. G. |
| Title |
Mixing and noise in diffusion and phonon cooled superconducting hot-electron bolometers |
Type |
Journal Article |
| Year |
1999 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
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| Volume |
85 |
Issue |
3 |
Pages |
1644-1653 |
| Keywords |
HEB, mixer |
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0021-8979 |
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no |
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556 |
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| Author |
Uchiki, Hisao; Kobayashi, Takayoshi; Sakaki, Hiroyuki |
| Title |
Photoluminescence and energyâ€loss rates in GaAs quantum wells under highâ€density excitation |
Type |
Journal Article |
| Year |
1987 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
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| Volume |
62 |
Issue |
3 |
Pages |
1010-1016 |
| Keywords |
2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions |
| Abstract |
The timeâ€resolved luminescence spectra from excited conduction subbands in three samples of multiâ€quantumâ€well GaAs/AlxGa1-xAs (x=0.3 and 1) semiconductors with several well widths and barrier heights were obtained under highâ€density excitations by a 30â€ps pulsed laser at 532 nm, which generated electron–hole pairs to the concentration of 1010–1013/cm2 per well per pulse at 77 K. The temperature and the Fermi energy of electron were determined by fitting best the constructed timeâ€resolved spectrum to the observed, and the timeâ€dependent electron energy was obtained by using these parameters. The energyâ€loss rates of hot electrons are at least twice smaller than the calculated ones induced by the electronâ€polar phonon scattering, including the screening effect due to the high carrier density. |
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no |
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635 |
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