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| Author | Rasulova, G. K.; Pentin, I. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Khabibullin, R. A.; Klimov, E. A.; Klochkov, A. N.; Goltsman, G. N. | ||||
| Title | Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime | Type | Journal Article | ||
| Year | 2020 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 128 | Issue | 22 | Pages  |
224303 (1 to 11) |
| Keywords | HEB, resonant tunneling diode, RTD | ||||
| Abstract | The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1262 | |||
| Permanent link to this record | |||||
| Author | Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. | ||||
| Title | Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation | Type | Journal Article | ||
| Year | 2015 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 118 | Issue | 19 | Pages |
194303 |
| Keywords | terahertz detectors, asymmetric carbon nanotubes, CNT | ||||
| Abstract | Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors. | ||||
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| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1169 | |||
| Permanent link to this record | |||||
| Author | Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. | ||||
| Title | Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes | Type | Journal Article | ||
| Year | 2007 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 101 | Issue | 12 | Pages |
124508 (1 to 6) |
| Keywords | HEB, mixer, membrane | ||||
| Abstract | The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 560 | |||
| Permanent link to this record | |||||
| Author | Maingault, L.; Tarkhov, M.; Florya, I.; Semenov, A.; Espiau de Lamaëstre, R.; Cavalier, P.; Gol’tsman, G.; Poizat, J.-P.; Villégier, J.-C. | ||||
| Title | Spectral dependency of superconducting single photon detectors | Type | Journal Article | ||
| Year | 2010 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 107 | Issue | 11 | Pages |
116103 (1 to 3) |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We investigate the effect of varying both incoming optical wavelength and width of NbN nanowires on the superconducting single photon detectors (SSPD) detection efficiency. The SSPD are current biased close to critical value and temperature fixed at 4.2 K, far from transition. The experimental results are found to verify with a good accuracy predictions based on the “hot spot model,” whose size scales with the absorbed photon energy. With larger optical power inducing multiphoton detection regime, the same scaling law remains valid, up to the three-photon regime. We demonstrate the validity of applying a limited number of measurements and using such a simple model to reasonably predict any SSPD behavior among a collection of nanowire device widths at different photon wavelengths. These results set the basis for designing efficient single photon detectors operating in the infrared (2–5 μm range). This work was supported by European projects FP6 STREP “SINPHONIA” (Contract No. NMP4-CT-2005-16433) and IP “QAP” (Contract No. 15848). |
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| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1392 | |||
| Permanent link to this record | |||||
| Author | Baselmans, J. J. A.; Baryshev, A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. | ||||
| Title | Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers | Type | Journal Article | ||
| Year | 2006 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 100 | Issue | 8 | Pages |
084510 (1 to 7) |
| Keywords | NbN HEB mixers | ||||
| Abstract | We present a detailed experimental study of the direct detection effect in a small volume (0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electron bolometer mixer at 673GHz. We find that the small signal noise temperature, relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 and 77K calibration loads. In a separate set of experiments we show that the direct detection effect is caused by a combination of bias current reduction when switching from the 77 to the 300K load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain. |
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1442 | |||
| Permanent link to this record | |||||