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Semenov, A.; Engel, A.; Il'in, K.; Gol'tsman, G.; Siegel, M.; Hübers, H.-W. |
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Title |
Ultimate performance of a superconducting quantum detector |
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Journal Article |
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Year |
2003 |
Publication |
Eur. Phys. J. Appl. Phys. |
Abbreviated Journal |
Eur. Phys. J. Appl. Phys. |
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Volume |
21 |
Issue |
3 |
Pages |
171-178 |
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Keywords |
NbN SSPD, SNSPD |
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Abstract |
We analyze the ultimate performance of a superconducting quantum detector in order to meet requirements for applications in near-infrared astronomy and X-ray spectroscopy. The detector exploits a combined detection mechanism, in which avalanche quasiparticle multiplication and the supercurrent jointly produce a voltage response to a single absorbed photon via successive formation of a photon-induced and a current-induced normal hotspot in a narrow superconducting strip. The response time of the detector should increase with the photon energy providing energy resolution. Depending on the superconducting material and operation conditions, the cut-off wavelength for the single-photon detection regime varies from infrared waves to visible light. We simulated the performance of the background-limited infrared direct detector and X-ray photon counter utilizing the above mechanism. Low dark count rate and intrinsic low-frequency cut-off allow for realizing a background limited noise equivalent power of 10−20 W Hz−1/2 for a far-infrared direct detector exposed to 4-K background radiation. At low temperatures, the intrinsic response time of the counter is rather determined by diffusion of nonequilibrium electrons than by the rate of energy transfer to phonons. Therefore, thermal fluctuations do not hamper energy resolution of the X-ray photon counter that should be better than 10−3 for 6-keV photons. Comparison of new data obtained with a Nb based detector and previously reported results on NbN quantum detectors support our estimates of ultimate detector performance. |
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1286-0042 |
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534 |
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Burke, P. J.; Schoelkopf, R. J.; Prober, D. E.; Skalare, A.; Karasik, B. S.; Gaidis, M. C.; McGrath, W. R.; Bumble, B.; LeDuc, H. G. |
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Title |
Mixing and noise in diffusion and phonon cooled superconducting hot-electron bolometers |
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Journal Article |
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Year |
1999 |
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J. Appl. Phys. |
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85 |
Issue |
3 |
Pages |
1644-1653 |
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Keywords |
HEB, mixer |
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0021-8979 |
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556 |
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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. |
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Title |
Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes |
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Journal Article |
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2007 |
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J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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101 |
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12 |
Pages |
124508 (1 to 6) |
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Keywords |
HEB, mixer, membrane |
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The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach. |
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0021-8979 |
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560 |
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Uchiki, Hisao; Kobayashi, Takayoshi; Sakaki, Hiroyuki |
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Photoluminescence and energyâ€loss rates in GaAs quantum wells under highâ€density excitation |
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1987 |
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J. Appl. Phys. |
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62 |
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3 |
Pages |
1010-1016 |
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Keywords |
2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions |
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Abstract |
The timeâ€resolved luminescence spectra from excited conduction subbands in three samples of multiâ€quantumâ€well GaAs/AlxGa1-xAs (x=0.3 and 1) semiconductors with several well widths and barrier heights were obtained under highâ€density excitations by a 30â€ps pulsed laser at 532 nm, which generated electron–hole pairs to the concentration of 1010–1013/cm2 per well per pulse at 77 K. The temperature and the Fermi energy of electron were determined by fitting best the constructed timeâ€resolved spectrum to the observed, and the timeâ€dependent electron energy was obtained by using these parameters. The energyâ€loss rates of hot electrons are at least twice smaller than the calculated ones induced by the electronâ€polar phonon scattering, including the screening effect due to the high carrier density. |
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635 |
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Annunziata, Anthony J.; Quaranta, Orlando; Santavicca, Daniel F.; Casaburi, Alessandro; Frunzio, Luigi; Ejrnaes, Mikkel; Rooks, Michael J.; Cristiano, Roberto; Pagano, Sergio; Frydman, Aviad; Prober, Daniel E. |
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Title |
Reset dynamics and latching in niobium superconducting nanowire single-photon detectors |
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Journal Article |
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2010 |
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J. Appl. Phys. |
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108 |
Issue |
8 |
Pages |
7 |
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Keywords |
SNSPD |
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We study the reset dynamics of niobium (Nb) superconducting nanowire single-photon detectors (SNSPDs) using experimental measurements and numerical simulations. The numerical simulations of the detection dynamics agree well with experimental measurements, using independently determined parameters in the simulations. We find that if the photon-induced hotspot cools too slowly, the device will latch into a dc resistive state. To avoid latching, the time for the hotspot to cool must be short compared to the inductive time constant that governs the resetting of the current in the device after hotspot formation. From simulations of the energy relaxation process, we find that the hotspot cooling time is determined primarily by the temperature-dependent electron-phonon inelastic time. Latching prevents reset and precludes subsequent photon detection. Fast resetting to the superconducting state is, therefore, essential, and we demonstrate experimentally how this is achieved. We compare our results to studies of reset and latching in niobium nitride SNSPDs. |
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RPLAB @ gujma @ |
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649 |
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