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| Author |
Seleznev, V. A.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Zolotov, P. I.; Vasil'ev, D. D.; Moiseev, K. M.; Malevannaya, E. I.; Smirnov, K. V. |
| Title |
Superconducting detector of IR single-photons based on thin WSi films |
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Conference Article |
| Year |
2016 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
737 |
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012032 |
| Keywords |
WSi SSPD, SNSPD, NEP |
| Abstract |
We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP). |
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1742-6588 |
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1235 |
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Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Lobanov, Y.; Shcherbatenko, M.; Korneev, A.; Pernice, W.; Goltsman, G. |
| Title |
Waveguide integrated superconducting single-photon detector for on-chip quantum and spectral photonic application |
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Conference Article |
| Year |
2017 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
917 |
Issue |
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Pages |
062032 |
| Keywords |
SSPD, SNSPD, waveguide |
| Abstract |
With use of the travelling-wave geometry approach, integrated superconductor- nanophotonic devices based on silicon nitride nanophotonic waveguide with a superconducting NbN-nanowire suited on top of the waveguide were fabricated. NbN-nanowire was operated as a single-photon counting detector with up to 92 % on-chip detection efficiency in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 106 in C-band at 1550 nm wavelength |
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RPLAB @ kovalyuk @ |
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1140 |
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Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. |
| Title |
Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform |
Type |
Conference Article |
| Year |
2017 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
917 |
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Pages |
062042 |
| Keywords |
Si3N4, Bragg waveguides |
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We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. These waveguides would serve as efficient notch-filters with the desired characteristics. Transmission spectra of the fabricated integrated notch filters have been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. Performance of the filters has been studied depending on different parameters, such as pitch, filling factor, and height of teeth of the Bragg grating |
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RPLAB @ kovalyuk @ |
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1141 |
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Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G. |
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Planar Schottky diode with a Γ-shaped anode suspended bridge |
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Conference Article |
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2020 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
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012154 |
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Schottky diode, GaAs, InP substrate |
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In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate. |
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1742-6588 |
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1152 |
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Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. |
| Title |
Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector |
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Conference Article |
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2020 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
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012156 |
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Shottky diode, THz, direct detector, multipixel camera |
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In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns. |
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1742-6588 |
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1153 |
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