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Author (up) Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures Type Journal Article
  Year 1989 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 50 Issue 5 Pages 283-286  
  Keywords YBCO HTS films  
  Abstract The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs.  
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  Notes Approved no  
  Call Number Serial 1690  
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Author (up) Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S. url  doi
openurl 
  Title Universal bottleneck for thermal relaxation in disordered metallic films Type Journal Article
  Year 2020 Publication JETP Lett. Abbreviated Journal Jetp Lett.  
  Volume 111 Issue 2 Pages 104-108  
  Keywords NbN disordered metallic films, thermal relaxation  
  Abstract We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.  
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  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1164  
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Author (up) Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound Type Journal Article
  Year 1987 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 46 Issue 6 Pages 285-287  
  Keywords YBCO HTS HEB  
  Abstract For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals.  
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  Notes Approved no  
  Call Number Serial 1706  
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Author (up) Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state Type Journal Article
  Year 1982 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 36 Issue 7 Pages 296-299  
  Keywords HEB  
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  Notes Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии Approved no  
  Call Number Serial 1717  
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N. url  openurl
  Title Transitions of electrons between excited states of donors in germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 2 Pages 63-65  
  Keywords Ge, donors, excited states  
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  Notes Approved no  
  Call Number Serial 1740  
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. url  openurl
  Title Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 6 Pages 241  
  Keywords Ge, gamma irradiation, defects, impurities  
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  Notes Approved no  
  Call Number Serial 1742  
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. url  openurl
  Title Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum Type Journal Article
  Year 1987 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 46 Issue 5 Pages 237-238  
  Keywords YBCO HTS detectors  
  Abstract For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6.  
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  Notes Approved no  
  Call Number Serial 1703  
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. url  openurl
  Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 5 Pages 185-186  
  Keywords Ge, Si, neutral impurity atom, binding energy  
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  Notes Approved no  
  Call Number Serial 1739  
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. url  openurl
  Title Cross section for binding of free carriers into excitons in germanium Type Journal Article
  Year 1981 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 33 Issue 11 Pages 574  
  Keywords Ge, excitons, photoconductivity  
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  Notes Approved no  
  Call Number Serial 1718  
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Observation of the free-exciton spectrum at submillimeter wavelengths Type Journal Article
  Year 1972 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 16 Issue 4 Pages 161-162  
  Keywords Ge, energy spectrum, free excitons  
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  Notes Approved no  
  Call Number Serial 1736  
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Author (up) Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. url  openurl
  Title Energy spectrum of free excitons in germanium Type Journal Article
  Year 1973 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 18 Issue 3 Pages 93  
  Keywords Ge, free excitons, energy spectrum  
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  Notes Approved no  
  Call Number Serial 1734  
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Author (up) Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. url  openurl
  Title Absorption spectra in electron transitions between excited states of impurities in germanium Type Journal Article
  Year 1975 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 22 Issue 4 Pages 95-97  
  Keywords Ge, impurities, excited states, absorption spectra  
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  Notes Approved no  
  Call Number Serial 1773  
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Author (up) Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. url  openurl
  Title Intervalley cyclotron-impurity resonance of electrons in n-Ge Type Journal Article
  Year 1976 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 24 Issue 3 Pages 125-128  
  Keywords n-Ge, cyclotron-impurity resonance  
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  Notes Approved no  
  Call Number Serial 1730  
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Author (up) Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Heating of quasiparticles in a superconducting film in the resistive state Type Journal Article
  Year 1981 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 34 Issue 5 Pages 268-271  
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  Notes Approved no  
  Call Number Serial 1716  
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Author (up) Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. url  openurl
  Title Carrier lifetime in excited states of shallow impurities in germanium Type Journal Article
  Year 1977 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 25 Issue 12 Pages 539-543  
  Keywords Ge, shallow impurities, excited states  
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  Notes Approved no  
  Call Number Serial 1726  
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Author (up) Gol’tsman, G. N.; Smirnov, K. V. url  doi
openurl 
  Title Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures Type Journal Article
  Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.  
  Volume 74 Issue 9 Pages 474-479  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.  
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  ISSN 0021-3640 ISBN Medium  
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  Notes По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах Approved no  
  Call Number Serial 1541  
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Author (up) Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. url  doi
openurl 
  Title Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon Type Journal Article
  Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.  
  Volume 73 Issue 1 Pages 44-47  
  Keywords uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field  
  Abstract The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.  
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  ISSN 0021-3640 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1752  
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Author (up) Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Energy relaxation of two-dimensional electrons in the quantum Hall effect regime Type Journal Article
  Year 2000 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 71 Issue 1 Pages 31-34  
  Keywords 2DEG, GaAs/AlGaAs heterostructures  
  Abstract The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.  
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  Notes http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) Approved no  
  Call Number Serial 1559  
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Author (up) Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. url  doi
openurl 
  Title Generation of nanosecond terahertz pulses by the optical rectification method Type Journal Article
  Year 2012 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 96 Issue 2 Pages 94-97  
  Keywords optical rectification, lithium niobate crystal  
  Abstract The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2.  
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  Notes Approved no  
  Call Number Serial 1377  
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Author (up) Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. url  doi
openurl 
  Title Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K Type Journal Article
  Year 1996 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 64 Issue 5 Pages 404-409  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.  
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  Notes http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) Approved no  
  Call Number Serial 1608  
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Author (up) Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. url  openurl
  Title Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures Type Journal Article
  Year 1995 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 61 Issue 7 Pages 591-595  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults.  
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  Notes Approved no  
  Call Number Serial 1624  
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