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Author (up) Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures Type Journal Article
Year 1989 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 50 Issue 5 Pages 283-286
Keywords YBCO HTS films
Abstract The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs.
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Call Number Serial 1690
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Author (up) Andreev, A. F.
Title The thermal conductivity of the intermediate state in superconductors Type Journal Article
Year 1964 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 19 Issue 5 Pages 1228-1231
Keywords superconductors, intermediate state, thermal conductivity
Abstract It is shown that, owing to over-the-barrier reflection of electron excitations at the boundary of the normal and superconducting phases, a temperature drop occurs when there is a flow of heat. The additional thermal resistance of a superconductor in the intermediate state is calculated. It is shown that it increases exponentially as the temperature is lowered and does not depend on the electron mean free path.
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Call Number MSPU @ s @ Andreev_reflection Serial 216
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Author (up) Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S.
Title Universal bottleneck for thermal relaxation in disordered metallic films Type Journal Article
Year 2020 Publication JETP Lett. Abbreviated Journal Jetp Lett.
Volume 111 Issue 2 Pages 104-108
Keywords NbN disordered metallic films, thermal relaxation
Abstract We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.
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ISSN 0021-3640 ISBN Medium
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Call Number Serial 1164
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Author (up) Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V.
Title Electron-phonon interaction in ultrathin Nb films Type Journal Article
Year 1990 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 70 Issue 3 Pages 505-511
Keywords Nb films
Abstract A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.

1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated.
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Call Number Serial 241
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Author (up) Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V.
Title Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound Type Journal Article
Year 1987 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 46 Issue 6 Pages 285-287
Keywords YBCO HTS HEB
Abstract For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals.
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Call Number Serial 1706
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