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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Heating of electrons in a superconductor in the resistive state by electromagnetic radiation |
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Year |
1984 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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59 |
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2 |
Pages |
442-450 |
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Nb HEB |
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Abstract |
The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction. |
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RPLAB @ phisix @ |
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983 |
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Author |
Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
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1982 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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36 |
Issue |
7 |
Pages |
296-299 |
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HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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1717 |
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Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
Transitions of electrons between excited states of donors in germanium |
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Year |
1971 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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14 |
Issue |
2 |
Pages |
63-65 |
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Keywords |
Ge, donors, excited states |
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1740 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
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Title |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
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1977 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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45 |
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3 |
Pages |
555-565 |
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Ge, GaAs, magnetic field, donors, energy spectrum |
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The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. |
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1728 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
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Title |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
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1971 |
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JETP Lett. |
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JETP Lett. |
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Volume |
14 |
Issue |
6 |
Pages |
241 |
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Ge, gamma irradiation, defects, impurities |
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1742 |
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