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Kaganov, M. L.; Lifshitz, I. M.; Tanatarov, L. V. |
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Title |
Relaxation between electrons and the crystalline lattice |
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1957 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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4 |
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2 |
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173-178 |
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HEB, nonlinear equations, numerical model |
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894 |
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Author |
Andreev, A. F. |
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Title |
The thermal conductivity of the intermediate state in superconductors |
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Journal Article |
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Year |
1964 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
19 |
Issue |
5 |
Pages |
1228-1231 |
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Keywords |
superconductors, intermediate state, thermal conductivity |
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Abstract |
It is shown that, owing to over-the-barrier reflection of electron excitations at the boundary of the normal and superconducting phases, a temperature drop occurs when there is a flow of heat. The additional thermal resistance of a superconductor in the intermediate state is calculated. It is shown that it increases exponentially as the temperature is lowered and does not depend on the electron mean free path. |
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MSPU @ s @ Andreev_reflection |
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216 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
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Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
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Year |
1971 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
5 |
Pages |
185-186 |
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Keywords |
Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
Transitions of electrons between excited states of donors in germanium |
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Year |
1971 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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14 |
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2 |
Pages |
63-65 |
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Ge, donors, excited states |
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1740 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
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Title |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
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Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
6 |
Pages |
241 |
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Keywords |
Ge, gamma irradiation, defects, impurities |
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1742 |
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