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Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. |
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Time delay of resistive-state formation in superconducting stripes excited by single optical photons |
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2003 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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67 |
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13 |
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132508 (1 to 4) |
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NbN SSPD, SNSPD |
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Abstract |
We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes. |
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0163-1829 |
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1519 |
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Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. |
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Title |
Electron energy relaxation in disordered superconducting NbN films |
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Journal Article |
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Year |
2020 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
102 |
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5 |
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054501 (1 to 15) |
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Keywords |
NbN SSPD, SNSPD, HEB, bandwidth, relaxation time |
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We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material. |
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2469-9950 |
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1266 |
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Smolyaninov, I. I.; Zayats, A. V.; Stanishevsky, A.; Davis, C. C. |
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Optical control of photon tunneling through an array of nanometer-scale cylindrical channels |
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2002 |
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Phys. Rev. B |
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Phys. Rev. B |
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66 |
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20 |
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205414_1-205414_5 |
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optical mixing |
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1098-0121 |
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499 |
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Su, M. Y.; Carter, S. G.; Sherwin, M. S. |
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Title |
Strong-field terahertz optical mixing in excitons |
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Journal Article |
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Year |
2003 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
67 |
Issue |
12 |
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optical mixing |
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1098-0121 |
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500 |
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Ciulin, V.; Carter, S. G.; Sherwin, M. S. |
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Terahertz optical mixing in biased GaAs single quantum wells |
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2004 |
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Phys. Rev. B |
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Phys. Rev. B |
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70 |
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11 |
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115312-(1-6) |
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Keywords |
optical mixing |
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1098-0121 |
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