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Author Parker, W. H.
Title Modified heating theory of nonequilibrium superconductors Type Journal Article
Year 1975 Publication Phys. Rev. B Abbreviated Journal
Volume 12 Issue 9 Pages 3667-3672
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Publisher (down) American Physical Society Place of Publication Editor
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Notes Approved no
Call Number mht_Parker_1975 Serial 221
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Author Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M.
Title Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy Type Journal Article
Year 1994 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 49 Issue 15 Pages 10484-10494
Keywords Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy
Abstract Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data.
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Publisher (down) American Physical Society Place of Publication Editor
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Notes Approved no
Call Number Serial 1005
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Author Perrin, N.; Vanneste, C.
Title Response of superconducting films to a periodic optical irradiation Type Journal Article
Year 1983 Publication Phys. Rev. B Abbreviated Journal
Volume 28 Issue 9 Pages 5150-5159
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Notes Approved no
Call Number sc_resp_Perrin_1983 Serial 233
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Author Sergeev, A.; Mitin, V.
Title Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials Type Journal Article
Year 2000 Publication Phys. Rev. B. Abbreviated Journal Phys. Rev. B.
Volume 61 Issue 9 Pages 6041-6047
Keywords disordered conductors, scattering potential, electron-phonon interaction
Abstract Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film.
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ISSN 0163-1829 ISBN Medium
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Notes Approved no
Call Number Serial 307
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Author Smolyaninov, I. I.; Zayats, A. V.; Stanishevsky, A.; Davis, C. C.
Title Optical control of photon tunneling through an array of nanometer-scale cylindrical channels Type Journal Article
Year 2002 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 66 Issue 20 Pages 205414_1-205414_5
Keywords optical mixing
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Language Summary Language Original Title
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ISSN 1098-0121 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 499
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