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Author Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I.
Title Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films Type Journal Article
Year (up) 1998 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 57 Issue 24 Pages 15623-15628
Keywords NbC films
Abstract A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1585
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Author Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M.
Title Electron–phonon interaction in disordered conductors Type Journal Article
Year (up) 1999 Publication Phys. Rev. B Condens. Matter Abbreviated Journal Phys. Rev. B Condens. Matter
Volume 263-264 Issue Pages 190-192
Keywords disordered conductors, electron-phonon interaction
Abstract The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1765
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Author Sergeev, A.; Mitin, V.
Title Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials Type Journal Article
Year (up) 2000 Publication Phys. Rev. B. Abbreviated Journal Phys. Rev. B.
Volume 61 Issue 9 Pages 6041-6047
Keywords disordered conductors, scattering potential, electron-phonon interaction
Abstract Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 307
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Author Smolyaninov, I. I.; Zayats, A. V.; Stanishevsky, A.; Davis, C. C.
Title Optical control of photon tunneling through an array of nanometer-scale cylindrical channels Type Journal Article
Year (up) 2002 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 66 Issue 20 Pages 205414_1-205414_5
Keywords optical mixing
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 499
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Author Su, M. Y.; Carter, S. G.; Sherwin, M. S.
Title Strong-field terahertz optical mixing in excitons Type Journal Article
Year (up) 2003 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 67 Issue 12 Pages
Keywords optical mixing
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 500
Permanent link to this record