| Records |
| Author |
Bremer, J. W.; Newhouse, V. L. |
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Journal Article |
| Year |
1958 |
Publication |
Phys. Rev. Lett. |
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1 |
Issue |
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Pages |
282 |
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Bremer, J. W.; Newhouse, V. L. |
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MSPU @ s @ bremer_prl_1958 |
Serial |
215 |
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| Author |
Rothwarf, Allen; Taylor, B. N. |
| Title |
Measurement of recombination lifetimes in superconductors |
Type |
Journal Article |
| Year |
1967 |
Publication |
Phys. Rev. Lett. |
Abbreviated Journal |
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| Volume |
19 |
Issue |
1 |
Pages |
27-30 |
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American Physical Society |
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no |
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MSPU @ s @ |
Serial |
220 |
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| Author |
Johnson, M. A.; Betz, A. L.; Townes, C. H. |
| Title |
10-μm Heterodyne Stellar Interferometer |
Type |
Journal Article |
| Year |
1974 |
Publication |
Phys. Rev. Lett. |
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| Volume |
33 |
Issue |
27 |
Pages |
1617-1620 |
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American Physical Society |
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no |
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228 |
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Shytov, A. V.; Levitov, L. S.; Beenakker, C. W. J. |
| Title |
Electromechanical noise in a diffusive conductor |
Type |
Journal Article |
| Year |
2002 |
Publication |
Phys. Rev. Lett. |
Abbreviated Journal |
Phys. Rev. Lett. |
| Volume |
88 |
Issue |
22 |
Pages |
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| Abstract |
Electrons moving in a conductor can transfer momentum to the lattice via collisions with impurities and boundaries, giving rise to a fluctuating mechanical stress tensor. The root-mean-squared momentum transfer per scattering event in a disordered metal (of dimension L greater than the mean free path l and screening length xi) is found to be reduced below the Fermi momentum by a factor of order l/L for shear fluctuations and (xi/L)^2 for pressure fluctuations. The excitation of an elastic bending mode by the shear fluctuations is estimated to fall within current experimental sensitivity for a nanomechanical oscillator. |
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0031-9007 |
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RPLAB @ s @ |
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433 |
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Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. |
| Title |
Energy-loss rates for hot electrons and holes in GaAs quantum wells |
Type |
Journal Article |
| Year |
1985 |
Publication |
Phys. Rev. Lett. |
Abbreviated Journal |
Phys. Rev. Lett. |
| Volume |
54 |
Issue |
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Pages |
2045-2048 |
| Keywords |
2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions |
| Abstract |
We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening. |
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no |
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633 |
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