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Author Bremer, J. W.; Newhouse, V. L.
Title Type Journal Article
Year (up) 1958 Publication Phys. Rev. Lett. Abbreviated Journal
Volume 1 Issue Pages 282
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Abstract
Address Bremer, J. W.; Newhouse, V. L.
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Notes Approved no
Call Number MSPU @ s @ bremer_prl_1958 Serial 215
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Author Rothwarf, Allen; Taylor, B. N.
Title Measurement of recombination lifetimes in superconductors Type Journal Article
Year (up) 1967 Publication Phys. Rev. Lett. Abbreviated Journal
Volume 19 Issue 1 Pages 27-30
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Publisher American Physical Society Place of Publication Editor
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Notes Approved no
Call Number MSPU @ s @ Serial 220
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Author Usadel, Klaus D.
Title Generalized diffusion equation for superconducting alloys Type Journal Article
Year (up) 1970 Publication Phys. Rev. Lett. Abbreviated Journal Phys. Rev. Lett.
Volume 25 Issue 8 Pages 507
Keywords
Abstract Eilenberger's transportlike equations for a superconductor of type II can be simplified very much in the dirty limit. In this limit a diffusionlike equation is derived which is the generalization of the de Gennes-Maki theory for dirty superconductors to arbitrary values of the order parameter.
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Notes Approved no
Call Number Serial 920
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Author Johnson, M. A.; Betz, A. L.; Townes, C. H.
Title 10-μm Heterodyne Stellar Interferometer Type Journal Article
Year (up) 1974 Publication Phys. Rev. Lett. Abbreviated Journal
Volume 33 Issue 27 Pages 1617-1620
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Corporate Author Thesis
Publisher American Physical Society Place of Publication Editor
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Notes Approved no
Call Number Serial 228
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Author Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W.
Title Energy-loss rates for hot electrons and holes in GaAs quantum wells Type Journal Article
Year (up) 1985 Publication Phys. Rev. Lett. Abbreviated Journal Phys. Rev. Lett.
Volume 54 Issue Pages 2045-2048
Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions
Abstract We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening.
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Notes Approved no
Call Number Serial 633
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