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Pan, S. K.; A. R. Kerr, M. W. Pospieszalski; Lauria, E. F.; Crady, W. K.; Horner, N.; Srikanth, Jr. S.; Bryerton, E.; Saini, K.; Claude, S. M. X.; Chin, C. C.; Dindo, P.; Rodrigues, G.; Derdall, D.; Zhang, J. Z.; Lichtenberger, A. W. |
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A fixed-tuned integrated SIS mixer with ultra-wideband IF and quantum-limited sensitivity for ALMA band 3 (84-116 GHz) receivers |
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2004 |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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55-61 |
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Northampton, MA |
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RPLAB @ s @ SIS_bandw_8GHz |
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358 |
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Meledin D.; Pantaleev M.; Pavolotsky A.; Risacher C.; Robles V.A.P.; Belitsky V.; Drakinskiy V.; Cherednichenko S. |
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Design of a balanced waveguide HEB mixer for APEX 1.32 THz receiver |
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2004 |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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211-217 |
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The prototype of a waveguide balanced Hot Electron Bolometer (HEB) Terahertz mixer is designed as a part of development for the APEX Project of Band T2 receiver for 1250-1390 GHz. The proposed mixer employs balanced scheme with two identical HEB devices. These individual mixers would be placed on two separate crystalline quartz substrates with dimensions of 1000μm x67μm x17 μm each with integrated RF choke filters, DC-bias and IF circuitry. A 3 dB quadrature waveguide directional coupler is needed to provide local oscillator (LO) injection and RF signal distribution between the two HEB mixers. We have designed the coupler to achieve the required frequency band, low insertion loss and symmetrical division of the RF and LO power within the band of interest. Initial design of HEB mixer layout is developed based on a previous development for a 345 GHz sideband separation mixer. We present also results of development of microfabrication technology of the waveguide hybrid employing micromachining approach combined with electroplating technique. |
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RPLAB @ atomics90 @ |
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972 |
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Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Baryshev, A.; Kooi, J.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol’tsman, G. |
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Hot electron bolometer mixers with improved interfaces: sensitivity, LO power and stability |
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2004 |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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17-24 |
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NbN HEB mixers |
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We study twin slot antenna coupled NbN hot electron bolometer mixers with an improved contact structure and a small volume, ranging from 1 µm × 0.1 µm to 2 × 0.3 µm. We obtain a DSB receiver noise temperature of 900 K at 1.6 THz and 940 K at 1.9 THz. To explore the practical usability of such small HEB mixers we evaluate the LO power requirement, the sensitivity and the stability. We find that the LO power requirement of the smallest mixers is reduced to about 240 nW at the Si lens of the mixer. This value is larger than expected from the isothermal technique and the known losses in the lens by a factor of 3-3.5. The stability of these receivers is characterized using a measurement of the Allan Variance. We find an Allan time of 0.5 sec. in an 80 MHz bandwidth. A small increase in stability can be reached by using a higher bias at the expense of a significant amount of sensitivity. The stability is sufficient for spectroscopic applications in a 1 MHz bandwidth at a 1 Hz chopping frequency. |
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1491 |
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Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte 2, P. A. J.; Voronov, B.; Gol’tsman, G. |
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Increased bandwidth of NbN phonon cooled hot electron bolometer mixers |
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2004 |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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381-386 |
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NbN HEB mixers, IF bandwidth |
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We study experimentally the IF gain bandwidth of NbN phonon-cooled hot-electron-bolometer (HEB) mixers for a set of devices with different contact structures but an identical NbN film. We observe that the IF bandwidth depends strongly on the exact contact structure and find an IF gain bandwidth of 6 GHz for a device with an additional superconducting layer (NbTiN) in between the active NbN film and the gold contact to the antenna. These results contradict the common opinion that the IF bandwidth is determined by the phonon-escape time between the NbN film and the substrate. Hence we calculate the IF gain bandwidth of a superconducting film using a two-temperature model. We find that the bandwidth increases strongly with operating temperature and is not limited by the phonon escape time. This is because of strong temperature dependence of the phonon specific heat in the NbN film. |
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1494 |
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Vachtomin, Y. B.; Antipov, S. V.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
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Noise temperature measurements of NbN phonon-cooled hot electron bolometer mixer at 2.5 and 3.8 THz |
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2004 |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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236-241 |
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HEB mixer, NbN, direct detection effect |
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We present the results of noise temperature measurements of NbN phonon-cooled HEB mixers based on a 3.5 nm NbN film deposited on a high-resistivity Si substrate with a 200 nm – thick MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 µm x 0.2 µm active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. We also present the results of direct detection contribution to the measured Y-factor and of a possible error of noise temperature calculation. This error was more than 8% for the mixer with in-plane dimensions of 2.4 x 0.16 µm 2 at the optimal noise temperature point. The use of a mesh filter enabled us to avoid the effect of direct detection and decrease optical losses by 0.5 dB. The paper is concluded by the investigation results of the mixer polarization response. It was shown that the polarization can differ from the circular one at 3.8 THz by more than 2 dB. |
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Northampton, Massachusetts, USA |
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