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Karpov, A.; Miller, D.; Rice, F.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J. |
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Title |
Development of 1.25 THz SIS mixer for Herschel Space Observatory |
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Conference Article |
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2006 |
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Proc. SPIE |
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6275 |
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62751 |
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Zmuidzinas, Jonas; Holland, Wayne S. |
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RPLAB @ s @ Karpov_SIS_2006 |
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401 |
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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J. M.; Delorme, Y.; Feret, A.; Hübers, H. W.; Semenov, A. D.; Gol'tsman, G. N. |
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Title |
2.5 THz multipixel heterodyne receiver based on NbN HEB mixers |
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Conference Article |
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Year |
2006 |
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Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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6275 |
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62750I (1 to 11) |
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Keywords |
HEB, mixer, membrane |
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A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation. |
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561 |
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Ryabchun, S.; Tong, C.-yu E.; Blundell, R.; Kimberk, R.; Gol’tsman, G. |
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Title |
Effect of microwave radiation on the stability of terahertz hot-electron bolometer mixers |
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Conference Article |
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Year |
2006 |
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Proc. SPIE |
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Proc. SPIE |
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6373 |
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63730J (1 to 5) |
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Keywords |
NbN HEB mixers, hot-electron bolometer mixers, stability, Allan variance, LO power fluctuations |
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We report our studies of the effect of microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the NbN hot-electron bolometer (HEB) mixer incorporated into a THz heterodyne receiver. It is shown that exposing the HEB mixer to microwave radiation does not result in a significant rise of the receiver noise temperature and degradation of the mixer conversion gain so long as the level of microwave power is small compared to the local oscillator drive. Hence the injection of a small, but controlled amount of microwave radiation enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the stability of HEB mixer receivers. |
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SPIE |
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Anwar, M.; DeMaria, A.J.; Shur, M.S. |
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Terahertz Physics, Devices, and Systems |
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1441 |
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Gol'tsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Smirnov, Konstantin V.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M. |
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Title |
NbN phonon-cooled hot-electron bolometer mixer for terahertz heterodyne receivers |
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Conference Article |
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Year |
2005 |
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Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
5727 |
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95-106 |
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Keywords |
NbN HEB mixers |
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We present the results of our studies of NbN phonon-cooled HEB mixers at terahertz frequencies. The mixers were fabricated from NbN film deposited on a high-resistivity Si substrate with an MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 x 0.2 μm2 active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. The largest gain bandwidth of 5.2 GHz was achieved for a mixer based on 2 nm thick NbN film deposited on MgO layer over Si substrate. The gain bandwidth of the mixer based on 3.5 nm NbN film deposited on Si with MgO is 4.2 GHz and the noise bandwidth for the same device amounts to 5 GHz. We also present the results of our research into decrease of the direct detection contribution to the measured Y-factor and a possible error of noise temperature calculation. The use of a square nickel cell mesh as an IR-filter enabled us to avoid the effect of direct detection and measure apparent value of the noise temperature which was 16% less than that obtained using conventional black polyethylene IR-filter. |
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Terahertz and Gigahertz Electronics and Photonics IV |
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378 |
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Milostnaya, I.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Slepneva, S.; Seleznev, V.; Chulkova, G.; Okunev, O.; Smirnov, K.; Voronov, B.; Gol’tsman, G.; Slysz, W.; Kitaygorsky, J.; Cross, A.; Pearlman, A.; Sobolewski, R. |
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Superconducting nanostructured detectors capable of single photon counting of mid-infrared optical radiation |
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Conference Article |
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2005 |
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Proc. SPIE |
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Proc. SPIE |
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5957 |
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59570A (1 to 9) |
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SSPD, SNSPD, single-photon detectors, superconductors, superconducting |
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We report on our progress in research and development of ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs were made of the 4-nm-thick NbN films with Tc 11 K, patterned as meander-shaped, 100-nm-wide strips, and covering an area of 10×10 μm2. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, a hotspot of excited electrons and redistribution of the biasing supercurrent, jointly produce a picosecond voltage transient signal across the superconducting nanostripe. The SSPDs are typically operated at 4.2 K, but their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by the optical absorption of our 4-nm-thick NbN film. With the wavelength increase of the incident photons,the QE of SSPDs decreases significantly, but even at the wavelength of 6 μm, the detector is able to count single photons and exhibits QE of about 10-2 %. The dark (false) count rate at 2 K is as low as 2x10-4 s,-1 which makes our detector essentially a background-limited sensor. The very low dark-count rate results in a noise equivalent power (NEP) below 10-18 WHz-1/2 for the mid-infrared range (6 μm). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for another, lower-Tc materials with a narrow superconducting gap and low quasiparticles diffusivity. The use of such superconductors should shift the cutoff wavelength below 10 μm. |
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SPIE |
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Rogalski, A.; Dereniak, E.L.; Sizov, F.F. |
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Infrared Photoelectronics |
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1458 |
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