| Records |
| Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
| Title |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
Type |
Conference Article |
| Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
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Pages |
55-58 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
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1602 |
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| Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
| Title |
Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
Type |
Conference Article |
| Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
| Volume |
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Issue |
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Pages |
163-166 |
| Keywords |
S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN |
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1603 |
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Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. |
| Title |
Effect of a strong magnetic field on the spectrum of donors in InSb |
Type |
Journal Article |
| Year |
1978 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
| Volume |
11 |
Issue |
12 |
Pages |
1395-1397 |
| Keywords |
InSb, spectrum of donors, strong magnetic field |
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1725 |
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Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
| Title |
Investigation of excited donor states in GaAs |
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Journal Article |
| Year |
1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
| Volume |
7 |
Issue |
10 |
Pages |
1248-1250 |
| Keywords |
GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
| Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
Type |
Journal Article |
| Year |
1976 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
| Volume |
10 |
Issue |
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Pages |
1379-1383 |
| Keywords |
Ge, cyclotron resonance, charged impurities, |
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1772 |
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