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Author (up) Andreev, A. F. url  openurl
  Title The thermal conductivity of the intermediate state in superconductors Type Journal Article
  Year 1964 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 19 Issue 5 Pages 1228-1231  
  Keywords superconductors, intermediate state, thermal conductivity  
  Abstract It is shown that, owing to over-the-barrier reflection of electron excitations at the boundary of the normal and superconducting phases, a temperature drop occurs when there is a flow of heat. The additional thermal resistance of a superconductor in the intermediate state is calculated. It is shown that it increases exponentially as the temperature is lowered and does not depend on the electron mean free path.  
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  Notes Approved no  
  Call Number MSPU @ s @ Andreev_reflection Serial 216  
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Author (up) Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Electron-phonon interaction in ultrathin Nb films Type Journal Article
  Year 1990 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 70 Issue 3 Pages 505-511  
  Keywords Nb films  
  Abstract A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.

1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated.		  
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  Notes Approved no  
  Call Number Serial 241  
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Author (up) Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Heating of electrons in a superconductor in the resistive state by electromagnetic radiation Type Journal Article
  Year 1984 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 59 Issue 2 Pages 442-450  
  Keywords Nb HEB  
  Abstract The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.  
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  Notes Approved no  
  Call Number RPLAB @ phisix @ Serial 983  
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. url  openurl
  Title Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field Type Journal Article
  Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 45 Issue 3 Pages 555-565  
  Keywords Ge, GaAs, magnetic field, donors, energy spectrum  
  Abstract The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.  
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  Notes Approved no  
  Call Number Serial 1728  
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. url  openurl
  Title Energy spectrum of acceptors in germanium and its response to a magnetic field Type Journal Article
  Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 45 Issue 4 Pages 769-776  
  Keywords p-Ge, photoconductivity, energy spectrum, magnetic field  
  Abstract We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.  
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  Notes Approved no  
  Call Number Serial 1727  
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. url  openurl
  Title Kinetics of electron and hole binding into excitons in germanium Type Journal Article
  Year 1983 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 57 Issue 2 Pages 369-376  
  Keywords Ge, electron and hole binding  
  Abstract The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.  
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  Notes Approved no  
  Call Number Serial 1711  
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. url  openurl
  Title Capture of photoexcited carriers by shallow impurity centers in germanium Type Journal Article
  Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 50 Issue 4 Pages 728-734  
  Keywords Ge, photoexcited carriers, shallow impurity centers  
  Abstract Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.  
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  Notes Approved no  
  Call Number Serial 1720  
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Population and lifetime of excited states of shallow impurities in Ge Type Journal Article
  Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 49 Issue 2 Pages 355-362  
  Keywords Ge, photothermal ionization, shallow impurities  
  Abstract An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.  
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  Notes Approved no  
  Call Number Serial 1719  
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Investigation of free excitons in Ge and their condensation at submillimeter wavelengths Type Journal Article
  Year 1976 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 43 Issue 1 Pages 116-122  
  Keywords Ge, free excitons  
  Abstract Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.  
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  Notes Approved no  
  Call Number Serial 1731  
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Submillimeter spectroscopy of semiconductors Type Journal Article
  Year 1973 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 37 Issue 2 Pages 299-304  
  Keywords semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons  
  Abstract The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1735  
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