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Rönnung, F.; Cherednichenko, S.; Winkler, D.; Gol'tsman, G. N. |
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Title |
A nanoscale YBCO mixer optically coupled with a bow tie antenna |
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Journal Article |
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Year |
1999 |
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Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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Volume |
12 |
Issue |
11 |
Pages |
853-855 |
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YBCO HTS HEB mixers |
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Abstract |
The bolometric response of YBa2Cu3O7-δ(YBCO) hot-electron bolometers (HEBs) to near-infrared radiation was studied. Devices were fabricated from a 50 nm thick film and had in-plane areas of 10 × 10 µm2, 2 × 0.2 µm2, 1 × 0.2µm2 and 0.5 × 0.2 µm2. We found that nonequilibrium phonons cool down more effectively for the bolometers with smaller area. For the smallest bolometer the bolometric component in the response is 10 dB less than for the largest one. |
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0953-2048 |
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1563 |
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Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
A fast infrared detector based on patterned YBCO thin film |
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Journal Article |
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Year |
1994 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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Volume |
7 |
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5 |
Pages |
321-323 |
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Keywords |
YBCO HTS detector |
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Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time. |
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0953-2048 |
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1646 |
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Korneeva, Y. P.; Mikhailov, M. Y.; Pershin, Y. P.; Manova, N. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Korneev, A. A.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Y.; Goltsman, G. N. |
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Title |
Superconducting single-photon detector made of MoSi film |
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Journal Article |
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2014 |
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Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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Volume |
27 |
Issue |
9 |
Pages |
095012 |
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Keywords |
SSPD, SNSPD |
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Abstract |
We fabricated and characterized nanowire superconducting single-photon detectors made of 4 nm thick amorphous Mox Si1−x films. At 1.7 K the best devices exhibit a detection efficiency (DE) up to 18% at 1.2 $\mu {\rm m}$ wavelength of unpolarized light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The DE was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum DE limited by photon absorption in the thin MoSi film. |
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IOP Publishing |
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RPLAB @ sasha @ korneeva2014superconducting |
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1044 |
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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
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Title |
Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
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Journal Article |
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2019 |
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Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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Volume |
32 |
Issue |
7 |
Pages |
075003 |
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Keywords |
NbN HEB mixer, GaN buffer layer, sapphire substrate |
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We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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Antipov_2019 |
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1277 |
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