| Record |
Author  |
Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. |
| Title |
Performance of THz components based on microstrip PECVD SiNx technology |
Type |
Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
| Volume |
7 |
Issue |
6 |
Pages |
765-771 |
| Keywords |
transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices |
| Abstract |
We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope. |
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| ISSN |
2156-342X |
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1294 |
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