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Author  |
Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. | ||||
| Title | Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? | Type | Conference Article | ||
| Year | 2006 | Publication | Proc. 17th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 17th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 187-189 | ||
| Keywords | NbN HEB mixers | ||||
| Abstract | We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm). | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1439 | |||
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