| Home | << 1 >> |
|
| Record | |||||
|---|---|---|---|---|---|
Author  |
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. | ||||
| Title | Carrier lifetime in excited states of shallow impurities in germanium | Type | Journal Article | ||
| Year | 1977 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 25 | Issue | 12 | Pages | 539-543 |
| Keywords | Ge, shallow impurities, excited states | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1726 | |||
| Permanent link to this record | |||||