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| Record | |||||
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Author  |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. | ||||
| Title | Investigation of excited donor states in GaAs | Type | Journal Article | ||
| Year | 1974 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
| Volume | 7 | Issue | 10 | Pages | 1248-1250 |
| Keywords | GaAs, excited donor states | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1733 | |||
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