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Blundell, R.; Kawamura, J. H.; Tong, C. E.; Papa, D. C.; Hunter, T. R.; Gol’tsman, G. N.; Cherednichenko, S. I.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
A hot-electron bolometer mixer receiver for the 680-830 GHz frequency range |
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Conference Article |
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Year |
1998 |
Publication |
Proc. 6-th Int. Conf. Terahertz Electron. |
Abbreviated Journal |
Proc. 6-th Int. Conf. Terahertz Electron. |
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18-20 |
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Keywords |
NbN HEB mixers |
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Abstract |
We describe a heterodyne receiver designed to operate in the partially transparent atmospheric windows centered on 680 and 830 GHz. The receiver incorporates a niobium nitride thin film, cooled to 4.2 K, as the phonon-cooled hot-electron mixer element. The double sideband receiver noise, measured over the frequency range 680-830 GHz, is typically 700-1300 K. The instantaneous output bandwidth of the receiver is 600 MHz. This receiver has recently been used at the SubMillimeter Telescope, jointly operated by the Steward Observatory and the Max Planck Institute for Radioastronomy, for observations of the neutral carbon and CO spectral lines at 810 GHz and at 806 and 691 GHz respectively. Laboratory measurements on a second mixer in the same test receiver have yielded extended high frequency performance to 1 THz. |
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Leeds, UK |
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IEEE |
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0-7803-4903-2 |
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IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) |
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1581 |
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Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
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Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
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1972 |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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6 |
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362-363 |
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Ge, cyclotron resonance, quantizing magnetic fields |
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1774 |
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Bonifas, Andrew P.; McCreery, Richard L. |
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‘Soft’ Au, Pt and Cu contacts for molecular junctions through surface-diffusion-mediated deposition |
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2010 |
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Nature Nanotechnology |
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Nat. Nanotech. |
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5 |
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8 |
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612–617 |
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Virtually all types of molecular electronic devices depend on electronically addressing a molecule or molecular layer through the formation of a metallic contact. The introduction of molecular devices into integrated circuits will probably depend on the formation of contacts using a vapour deposition technique, but this approach frequently results in the metal atoms penetrating or damaging the molecular layer. Here, we report a method of forming 'soft' metallic contacts on molecular layers through surface-diffusion-mediated deposition, in which the metal atoms are deposited remotely and then diffuse onto the molecular layer, thus eliminating the problems of penetration and damage. Molecular junctions fabricated by this method exhibit excellent yield (typically >90%) and reproducibility, and allow examination of the effects of molecular-layer structure, thickness and contact work function. |
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RPLAB @ gujma @ |
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682 |
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Boogaard, G.R.; Verbruggen, A.H.; Belzig, W.; Klapwijk T.M. |
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Resistance of superconducting nanowires connected to normal-metal leads |
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2004 |
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Phys. Rev. B |
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Phys. Rev. B |
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69 |
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220503(R)(1-4) |
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We study experimentally the low temperature resistance of superconducting nanowires connected to normal metal reservoirs. Wefind that a substantial fraction of the nanowires is resistive, down to the lowest tempera-ture measured, indicative of an intrinsic boundary resistance due to the Andreev-conversion of normal current to supercurrent. The results are successfully analyzed in terms of the kinetic equations for diffusive superconductors. |
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RPLAB @ atomics90 @ |
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960 |
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Boreiko, R.T.; Betz, A.L. |
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Far-infrared laser emission from deuterated ammonia |
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2002 |
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Applied Physics B: Lasers and Optics |
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Applied Physics B: Lasers and Optics |
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75 |
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8 |
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823-826 |
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0946-2171 |
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488 |
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