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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. |
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Title |
Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency |
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2017 |
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Proc. 28th Int. Symp. Space Terahertz Technol. |
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Proc. 28th Int. Symp. Space Terahertz Technol. |
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147-148 |
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NbN HEB mixers, GaN buffer-layer, IF bandwidth |
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In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth. |
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1175 |
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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
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Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
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2019 |
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Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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32 |
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7 |
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075003 |
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NbN HEB mixer, GaN buffer layer, sapphire substrate |
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We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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Antipov_2019 |
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1277 |
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Arams, F.; Allen, C.; Peyton, B.; Sard, E. |
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Millimeter mixing and detection in bulk InSb |
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1966 |
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Proc. IEEE |
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54 |
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4 |
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612-622 |
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InSb, mixer, detector |
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219 |
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Archer, J. W. |
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Multiple mixer, cryogenic receiver for 200-350 GHz |
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1983 |
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Rev. Sci. Instrum. |
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Rev. Sci. Instrum. |
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54 |
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10 |
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1371-1376 |
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Schottky, mixer, noise temperature |
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This paper describes a new 200–350-GHz dual polarization heterodyne radiometer receiver for radio astronomy applications. The receiver incorporates four pairs of cryogenically cooled Schottky-barrier diode single-ended mixers, each pair covering a 30–40-GHz subband of the full operating band. Each mixer, with its IF amplifier, is mounted in an individual cryogenic subdewar comprising a separate vcuum chamber and a cold stage, which may be readily thermally connected to or disconnected from the main refrigerator by a novel mechanical heat switch. A dual polarization LO diplexer is mounted on a rotary table above the subdewars. For band selection, the two diplexer rf output ports may be positioned over any of the four pairs of subdewars. The SSB receiver noise temperatues achieved are less than 500 K between 200 and 240 GHz, less than 800 K between 245 and 275 GHz and 1500 K at 345 GHz. |
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589 |
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Arcizet, O.; Jacques, V.; Siria, A.; Poncharal, P.; Vincent, P.; Seidelin, S. |
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A single nitrogen-vacancy defect coupled to a nanomechanical oscillator |
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2011 |
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Nature Physics |
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Nat. Phys. |
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7 |
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11 |
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879-883 |
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fromIPMRAS |
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We position a single nitrogen-vacancy (NV) centre hosted in a diamond nanocrystal at the extremity of a SiC nanowire. This novel hybrid system couples the degrees of freedom of two radically different systems: a nanomechanical oscillator and a single quantum object. We probe the dynamics of the nano-resonator through time-resolved nanocrystal fluorescence and photon-correlation measurements, conveying the influence of a mechanical degree of freedom on a non-classical photon emitter. Moreover, by immersing the system in a strong magnetic field gradient, we induce a magnetic coupling between the nanomechanical oscillator and the NV electronic spin, providing nanomotion readout through a single electronic spin. Spin-dependent forces inherent to this coupling scheme are essential in a variety of active cooling and entanglement protocols used in atomic physics, and should now be within the reach of nanomechanical hybrid systems. |
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RPLAB @ gujma @ |
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819 |
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