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Wiechers, C.; Lydersen, L.; Wittmann, C.; Elser, D.; Skaar, J.; Marquardt, Ch; Makarov, V.; Leuchs, G. |
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After-gate attack on a quantum cryptosystem |
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2011 |
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New J. Phys. |
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13 |
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1 |
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14 |
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quantum cryptography; hacking; interception; attack; SPD; APD; QKD |
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We present a method to control the detection events in quantum key distribution systems that use gated single-photon detectors. We employ bright pulses as faked states, timed to arrive at the avalanche photodiodes outside the activation time. The attack can remain unnoticed, since the faked states do not increase the error rate per se. This allows for an intercept-resend attack, where an eavesdropper transfers her detection events to the legitimate receiver without causing any errors. As a side effect, afterpulses, originating from accumulated charge carriers in the detectors, increase the error rate. We have experimentally tested detectors of the system id3110 (Clavis2) from ID Quantique. We identify the parameter regime in which the attack is feasible despite the side effect. Furthermore, we outline how simple modifications in the implementation can make the device immune to this attack. |
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RPLAB @ gujma @ |
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730 |
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Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector |
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2020 |
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Nanomaterials (Basel) |
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Nanomaterials (Basel) |
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10 |
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5 |
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1-12 |
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detector; quantum dots; short-wave infrared range; silicon |
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In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. |
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Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia |
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2079-4991 |
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PMID:32365694; PMCID:PMC7712218 |
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1151 |
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Смирнов, К. В. |
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AlGaAs/GaAs смеситель на эффекте разогрева двумерных электронов для тепловизора субмиллиметрового диапазона |
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2003 |
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Тезисы докладов VI Российской конференции по физике полупроводников |
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181 |
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2DEG, AlGaAs/GaAs heterostructures, mixer |
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ФТИ им. А. Ф. Иоффе, Санк-Петербург |
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VI Российской конференции по физике полупроводников (27-31 октября) |
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Unconfirmed; Сама конференция, однако, была -- её упоминают: [http://www.nsc.ru/HBC/article.phtml?nid=271&id=17], [https://www.isp.nsc.ru/institut/nauchnye-podrazdeleniya/lab-20/publikatsii/2003], [http://www.ioffe.ru/sem_tech/sem%5Fteh%5Fmovpe%5Fpublications%5Fru.htm#R2003], [https://istina.ips.ac.ru/collections/828771/] |
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1837 |
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Billade, Bhushan; Belitsky, Victor; Pavolotsky, Alexey; Lapkin, Igor; Kooi, Jacob |
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ALMA band 5 (163-211 GHz) sideband separation mixer |
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2009 |
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Proc. 20th Int. Symp. Space Terahertz Technol. |
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19-23 |
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SIS mixer, noise temperature, ALMA, band 5 |
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We present the design of ALMA Band 5 sideband separation SIS mixer and experimental results for the double side band mixer and first measurement results 2SB mixer. In this mixer, the LO injection circuitry is integrated on the mixer substrate using a directional coupler, combining microstrip lines with slot-line branches in the ground plane. The isolated port of the LO coupler is terminated by wideband floating elliptical termination. The mixer employs two SIS junctions with junction area of 3 µm² each, in the twin junction configuration, followed by a quarter wave transformer to match the RF probe. 2SB mixer uses two identical but mirrored chips, whereas each DSB mixer has the same end-piece configuration. The 2S mixer has modular design such that DSB mixers are measured independently and then integrated into 2SB simply by placing around the middle piece. Measurements of the DSB mixer show noise temperature of around 40K over the entire band. 2SB mixer is not fully characterized yet, however, preliminary measurement indicates SSB (un-corrected) noise temperature of 80K. |
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616 |
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Skalare, A.; McGrath, William R.; Echternach, P. M.; Leduc, H. G.; Siddiqi, I.; Verevkin, A.; Prober, D. E. |
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Aluminum hot-electron bolometer mixers at submillimeter wavelengths |
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2001 |
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IEEE Trans. Appl. Supercond. |
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11 |
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641-644 |
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Al HEB mixer, contacts, interface, in situ, in-situ, Aluminium HEB mixer |
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Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz-frequency spectroscopy within astrophysics. Al HEB mixers offer operation with an order of magnitude less local oscillator power, higher intermediate frequency bandwidth and potentially lower noise than competing devices made from other materials. We report on mixer experiments at 618 GHz with devices fabricated from films with sheet resistances in the range from about 55 Ω down to about 9 Ω per square. Intermediate frequency bandwidths of up to 3 GHz were measured (1 μm long device), with absorbed local oscillator power levels of 0.5 to 6 nW and mixer conversion up to -21.5 dB. High input coupling efficiency implies that the electrons in the device are able to thermalize before escaping from the device. It was found that the long coherence length complicates mixer operations due to the proximity of the contact pads. Also, saturation at the IF frequency may be a concern for this type of device, and warrants further studies. |
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ref919426b |
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1061 |
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