| Records |
Author  |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
| Title |
Investigation of excited donor states in GaAs |
Type |
Journal Article |
| Year |
1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
| Volume |
7 |
Issue |
10 |
Pages |
1248-1250 |
| Keywords |
GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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| Author |
Johnson, M. A.; Betz, A. L.; Townes, C. H. |
| Title |
10-μm Heterodyne Stellar Interferometer |
Type |
Journal Article |
| Year |
1974 |
Publication |
Phys. Rev. Lett. |
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| Volume |
33 |
Issue |
27 |
Pages |
1617-1620 |
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American Physical Society |
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228 |
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| Author |
Skocpol', W.J.; Beasley, M.R.; Tinkham M |
| Title |
Self-heating hotspots in superconducting thin film microbridges |
Type |
Journal Article |
| Year |
1974 |
Publication |
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Abbreviated Journal |
J. Appl. Phys. |
| Volume |
45 |
Issue |
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Pages |
4054-4066 |
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| Abstract |
Heating effects in both long and short superconducting thin-<ef><ac><81>lm rnicrobridges are described and analyzed. Except near T(c), at low voltages where superconducting quantum processes occur, all of our experimental dc I-V characteristics can be satisfactorily understood on the basis of a simple model of a localized normal hotspot maintained by Joule heating. We consider approximations appropriate to the cases of long bridges, short bridges, and bridges coupled to microwave radiation. The analysis leads to analytic expressions for the I-V characteristics which agree well with the experimental data. We show that the formation of such a hotspot is the dominant cause of the hysteresis observed in the I-V characteristics at low temperatures. We also show that the growth of such a hotspot imposes a high-voltage limit on the ac Josephson effect in these devices, and we compare the importance of such heating effects at high voltages in various types of superconducting weak links. |
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RPLAB @ atomics90 @ |
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961 |
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