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Richards, P. L.; Shen, T. M.; Harris, R. E.; Lloyd, F. L. |
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Title |
Quasiparticle heterodyne mixing in SIS tunnel junctions |
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1979 |
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Appl. Phys. Lett. |
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34 |
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5 |
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345-347 |
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MSPU @ s @ SIS_mixing_qua_part_Richards_1979 |
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222 |
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Tucker, J. R. |
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Title |
Quantum limited detection in tunnel junction mixers |
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Journal Article |
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1979 |
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IEEE J. Quantum Electron. |
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15 |
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11 |
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1234-1258 |
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Call Number |
sis_Tucker_1979 |
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223 |
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Author |
Astakhov, V I; Vanin, N V; Galaktionov, V V; Dorokhov, V M; Zakharov, V M; Khattatov, V U |
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Title |
Use of laser heterodyne spectrometry in determining monochromatic atmospheric transmission |
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Journal Article |
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Year |
1979 |
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Sov. J. Quantum Electron. |
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Volume |
9 |
Issue |
10 |
Pages |
1245-1250 |
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Keywords |
IR applications |
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0049-1748 |
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489 |
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Author |
Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
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Title |
Character of submillimeter photoconductivity in n-lnSb |
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Journal Article |
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Year |
1979 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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Volume |
49 |
Issue |
1 |
Pages |
121-128 |
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A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8). |
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RPLAB @ phisix @ |
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985 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Population and lifetime of excited states of shallow impurities in Ge |
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Journal Article |
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Year |
1979 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
49 |
Issue |
2 |
Pages |
355-362 |
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Keywords |
Ge, photothermal ionization, shallow impurities |
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An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. |
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1719 |
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