| Records |
Author  |
Altshuler, B. L.; Aronov, A. G. |
| Title |
Electron-Electron Interactions in Disordered Systems |
Type |
Book Chapter |
| Year |
1985 |
Publication |
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Abbreviated Journal |
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| Volume |
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Issue |
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Pages |
1-151 |
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Place of Publication |
North-Holland Pub. Co. Amsterdam-NY |
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Original Title |
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| Series Editor |
M. Pollak and A.L. Efros |
Series Title |
Modern Problems in Condensed Matter Physics |
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no |
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Serial |
267 |
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| Author |
Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. |
| Title |
Energy-loss rates for hot electrons and holes in GaAs quantum wells |
Type |
Journal Article |
| Year |
1985 |
Publication |
Phys. Rev. Lett. |
Abbreviated Journal |
Phys. Rev. Lett. |
| Volume |
54 |
Issue |
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Pages |
2045-2048 |
| Keywords |
2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions |
| Abstract |
We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening. |
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no |
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Serial |
633 |
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| Author |
Shaha, Jagdeep; Pinczukb, A.; Gossardb, A. C.; Wiegmannb, W. |
| Title |
Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes |
Type |
Journal Article |
| Year |
1985 |
Publication |
Phys. B+C |
Abbreviated Journal |
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| Volume |
134 |
Issue |
1-3 |
Pages |
174-178 |
| Keywords |
2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions |
| Abstract |
The first direct and separate determination of the hot electron and hot hole energy loss rates to the lattice shows unexpectedly large differences between electrons and holes in GaAs quantum wells. This large difference results from an anomalously low electron energy loss rate, which we attribute to the presence of non-equilibrium optical phonon rather than the effects of reduced dimensionality or dynamic screening. A model calculation of hot phonon effects is presented. |
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no |
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Serial |
634 |
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| Author |
Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. |
| Title |
Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца |
Type |
Journal Article |
| Year |
1985 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
| Volume |
19 |
Issue |
9 |
Pages |
1696-1698 |
| Keywords |
uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation |
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no |
| Call Number |
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Serial |
1760 |
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