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Gershenzon, E. M.; Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation |
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Year |
1991 |
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IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
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Volume |
27 |
Issue |
2 |
Pages |
1321-1324 |
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Keywords |
YBCO HTS detectors |
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Abstract |
Ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter waves to near infrared. With an increase in radiation frequency, the Josephson detection at the grain-boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. The electron-phonon relaxation time tau /sub eph/ is determined from direct measurements, quasi-stationary electron heating measurements, and the frequency dependence of the current at which maximum voltage shift is observed. The temperature dependence of tau /sub eph/ at T<or=40 K was found to be tau /sub eph/ approximately T/sup -1/. The results show that detectors with a response time of a few picoseconds at nitrogen temperature are attainable. |
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1941-0069 |
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1679 |
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Gol'tsman, G. N.; Semenov, A. D.; Gousev, Y. P.; Zorin, M. A.; Gogidze, I. G.; Gershenzon, E. M.; Lang, P. T.; Knott, W. J.; Renk, K. F. |
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Title |
Sensitive picosecond NbN detector for radiation from millimetre wavelengths to visible light |
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Journal Article |
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Year |
1991 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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4 |
Issue |
9 |
Pages |
453-456 |
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NbN HEB detectors |
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The authors report on the application of a broad-band NbN film detector which has high sensitivity and picosecond response time for detection of radiation from millimetre wavelengths to visible light. From a study of amplitude modulated radiation of backward-wave tubes and picosecond pulses from gas and solid state lasers at wavelengths between 2 mm and 0.53 mu m, they found a detectivity of 1010 W-1 cm Hz-1/2 and a response time of less than 50 ps at T=10 K. The characteristics were provided by using a 150 AA thick NbN film patterned into a structure of micron strips. According to the proposed detection mechanism, namely electron heating, they expect an intrinsic response time of approximately 20 ps at the same temperature. |
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0953-2048 |
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242 |
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Lang, P. T.; Leipold, I.; Knott, W. J.; Semenov, A. D.; Gol'tsman, G. N.; Renk, K. F. |
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Title |
New far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser |
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Journal Article |
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Year |
1991 |
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Appl. Phys. B |
Abbreviated Journal |
Appl. Phys. B |
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53 |
Issue |
4 |
Pages |
207-212 |
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CO2 IR lasers, applications, CH3Cl, CH3Br |
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In this paper we report on the detection of new far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser. We found 80 new lines for CH3Cl and 9 new lines for CH3Br in the frequency region between 16 cm−1 and 41 cm−1, all due to stimulated Raman scattering. For the Raman gain regions bandwidths up to about 700 MHz were found. We also observed high intensity short far-infrared laser pulses of durations in the nanosecond regime. |
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0721-7269 |
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1678 |
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Author |
Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б. |
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Title |
Механизм преобразования частоты в n-InSb-смесителе |
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Journal Article |
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Year |
1991 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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25 |
Issue |
11 |
Pages |
1986-1998 |
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Keywords |
n-InSb mixer |
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Проведено комплексное исследование n-InSb смесителя на λ=2.6 мм, включающее в себя исследование вольт-амперных характеристик при E=0−2 В/см, температурной зависимости проводимости в диапазоне T=1.6−20 K, высокочастотной проводимости при f=0.5−10 МГц и магнитосопротивления при H=0−5 кЭ. Показано, что в оптимальном режиме механизм преобразования частоты связан с фотоионизационными процессами при прыжковой фотопроводимости (ПФП). На основе модели ПФП рассчитан коэффициент преобразования смесителя и произведено сопоставление его с экспериментом. Показана несостоятельность модели преобразования частоты в компенсированном n-InSb (K≥0.8), основанной на разогреве электронов. Обсуждены требования к параметрам материала и режимам n-InSb смесителя миллиметрового диапазона волн. |
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Russian |
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1753 |
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