| Records |
| Author |
Lindgren, M.; Zorin, M. A.; Trifonov, V.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol'tsman, G. N.; Gershenzon, E. M. |
| Title |
Optical mixing in a patterned YBa2Cu3O7-δ thin film |
Type |
Journal Article |
| Year |
1994 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
65 |
Issue |
26 |
Pages |
3398-3400 |
| Keywords |
YBCO HTS HEB mixer, bandwidth |
| Abstract |
Mixing of 1.56 µm infrared radiation from two lasers in a high quality YBa2Cu3O7-δ thin film, patterned to parallel strips, was demonstrated. A mixer bandwidth of 18 GHz, limited by the measurement system, was obtained. A model based on nonequilibrium electron heating gives a good fit to the data and predicts an intrinsic mixer bandwidth in excess of 100 GHz, operating in the whole infrared spectrum. Reduction of bolometric effects and ways to decrease the conversion loss of the mixer is discussed. The minimum conversion loss is expected to be ~10 dB. |
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0003-6951 |
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251 |
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| Author |
Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F. |
| Title |
Broadband ultrafast superconducting NbN detector for electromagnetic radiation |
Type |
Journal Article |
| Year |
1994 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
75 |
Issue |
7 |
Pages |
3695-3697 |
| Keywords |
NbN HEB |
| Abstract |
An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect. |
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252 |
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Hong, Kyushik; Marsh, P. F.; Geok-Ing Ng; Pavlidis, D.; Hong, Chang-Hee |
| Title |
Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for terahertz applications |
Type |
Journal Article |
| Year |
1994 |
Publication |
IEEE Trans. Electron Devices |
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41 |
Issue |
9 |
Pages |
1489-1497 |
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253 |
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Matsushima, F.; Odashima, H.; Iwasaki, T.; Tsunekawa, S.; Takagi, K. |
| Title |
Frequency measurement of pure rotational transitions of H2O from 0.5 to 5 THz |
Type |
Conference Article |
| Year |
1994 |
Publication |
Conference on precision electromagnetic measurements digest |
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Pages |
23-24 |
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Frequencies of H2O pure rotational transitions from 0.5 to 5 THz have been measured with an accuracy of one part in 109 using a tunable far-infrared spectrometer. Measured frequencies of more than a hundred spectral lines provide an excellent wavelength and frequency calibration standard for the far infrared. |
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487 |
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Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. |
| Title |
Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy |
Type |
Journal Article |
| Year |
1994 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
49 |
Issue |
15 |
Pages |
10484-10494 |
| Keywords |
Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy |
| Abstract |
Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data. |
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American Physical Society |
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1005 |
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