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Author Hong, Kyushik; Marsh, P. F.; Geok-Ing Ng; Pavlidis, D.; Hong, Chang-Hee
Title Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for terahertz applications Type Journal Article
Year 1994 Publication IEEE Trans. Electron Devices Abbreviated Journal
Volume 41 Issue 9 Pages 1489-1497
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Call Number Serial 253
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Author Matsushima, F.; Odashima, H.; Iwasaki, T.; Tsunekawa, S.; Takagi, K.
Title Frequency measurement of pure rotational transitions of H2O from 0.5 to 5 THz Type Conference Article
Year 1994 Publication Conference on precision electromagnetic measurements digest Abbreviated Journal
Volume Issue Pages 23-24
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Abstract Frequencies of H2O pure rotational transitions from 0.5 to 5 THz have been measured with an accuracy of one part in 109 using a tunable far-infrared spectrometer. Measured frequencies of more than a hundred spectral lines provide an excellent wavelength and frequency calibration standard for the far infrared.
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Call Number Serial 487
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Author Dzardanov, A.; Ekstrom, H.; Gershenzon, E.; Gol'tsman, G.; Jacobsson, S.; Karasik, B.; Kollberg, E.; Okunev, O.; Voronov, B.; Yngvesson, S.
Title Hot-electron superconducting mixers for 20-500 GHz operation Type Conference Article
Year 1994 Publication Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. Abbreviated Journal
Volume 2250 Issue 4D Pages 276-278
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Abstract Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies.
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Call Number RPLAB @ phisix @ Serial 981
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Author Gol’tsman, G. N.
Title Terahertz technology in Russia Type Conference Article
Year 1994 Publication 24th European Microwave Conf. Abbreviated Journal 24th European Microwave Conf.
Volume 1 Issue Pages 113-121
Keywords (up) BWO, HEB mixers
Abstract The presentation consider the parameters and operating peculiarities of unique microwave generators of the terahertz range which have been created in Russia – the backward wave oscillators – as well as certain devices based on these generators, such as high resolution. spectrometers and time-resolving spectrometers with picosecond temporal resolution. Most resent BWO-based studies are illustrated by a project devoted to superconductive hot-electron. bolometers which are of great independent value for the terahertz technology as high-sensitive picosecond detectors and low noise broad-band mixers.
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Area Expedition Conference 24th European Microwave Conference
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Call Number Serial 1635
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Author Ekström, H.; Karasik, B.; Kollberg, E.; Yngvesson, K. S.
Title Investigation of a superconducting hot electron mixer Type Conference Article
Year 1994 Publication Proc. 5th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 5th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 169-188
Keywords (up) HEB mixers
Abstract Mixing at 20 GHz in niobium superconducting thin film strips in the resistive state is studied. Experiments give evidence that electron-heating is the main cause of the non linear phenomena. The requirements on the mode of operation and on the film parameters for small conversion loss and the possibility of conversion gain are discussed. Measurements indicate a minimum intrinsic conversion loss around 1 dB with a sharp drop for the lowest voltage bias-points, and a DSB mixer noise temperature between 100 and 450 K at 20 GHz. The device output noise temperature at the mixer operating point can be as low as 30-50 K. A simple theory is presented, which is based on the assumption that the small signal resistance is linearly dependent on power. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies.
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Call Number Serial 1642
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