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Lindgren, M.; Zorin, M. A.; Trifonov, V.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol'tsman, G. N.; Gershenzon, E. M. |
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Title |
Optical mixing in a patterned YBa2Cu3O7-δ thin film |
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Journal Article |
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Year |
1994 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
65 |
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26 |
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3398-3400 |
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YBCO HTS HEB mixer, bandwidth |
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Abstract |
Mixing of 1.56 µm infrared radiation from two lasers in a high quality YBa2Cu3O7-δ thin film, patterned to parallel strips, was demonstrated. A mixer bandwidth of 18 GHz, limited by the measurement system, was obtained. A model based on nonequilibrium electron heating gives a good fit to the data and predicts an intrinsic mixer bandwidth in excess of 100 GHz, operating in the whole infrared spectrum. Reduction of bolometric effects and ways to decrease the conversion loss of the mixer is discussed. The minimum conversion loss is expected to be ~10 dB. |
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0003-6951 |
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251 |
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Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F. |
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Title |
Broadband ultrafast superconducting NbN detector for electromagnetic radiation |
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Journal Article |
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1994 |
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J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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Volume |
75 |
Issue |
7 |
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3695-3697 |
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NbN HEB |
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An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect. |
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252 |
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Hong, Kyushik; Marsh, P. F.; Geok-Ing Ng; Pavlidis, D.; Hong, Chang-Hee |
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Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for terahertz applications |
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Journal Article |
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1994 |
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IEEE Trans. Electron Devices |
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41 |
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9 |
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1489-1497 |
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253 |
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Matsushima, F.; Odashima, H.; Iwasaki, T.; Tsunekawa, S.; Takagi, K. |
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Title |
Frequency measurement of pure rotational transitions of H2O from 0.5 to 5 THz |
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Conference Article |
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1994 |
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Conference on precision electromagnetic measurements digest |
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23-24 |
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Frequencies of H2O pure rotational transitions from 0.5 to 5 THz have been measured with an accuracy of one part in 109 using a tunable far-infrared spectrometer. Measured frequencies of more than a hundred spectral lines provide an excellent wavelength and frequency calibration standard for the far infrared. |
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487 |
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Dzardanov, A.; Ekstrom, H.; Gershenzon, E.; Gol'tsman, G.; Jacobsson, S.; Karasik, B.; Kollberg, E.; Okunev, O.; Voronov, B.; Yngvesson, S. |
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Title |
Hot-electron superconducting mixers for 20-500 GHz operation |
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Conference Article |
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1994 |
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Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. |
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2250 |
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4D |
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276-278 |
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Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies. |
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RPLAB @ phisix @ |
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981 |
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Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. |
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Title |
Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy |
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Journal Article |
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Year |
1994 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
49 |
Issue |
15 |
Pages |
10484-10494 |
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Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy |
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Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data. |
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American Physical Society |
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1005 |
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Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. |
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Title |
Superconductive properties of ultrathin NbN films on different substrates |
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Journal Article |
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1994 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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7 |
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6 |
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1097-1102 |
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NbN films |
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A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz. |
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0131-5366 |
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Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках |
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1631 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Zorin, M. A.; Karasik, B. S.; Trifonov, V. A. |
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Title |
Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation |
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Conference Article |
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1994 |
Publication |
Council on Low-temp. Phys. |
Abbreviated Journal |
Council on Low-temp. Phys. |
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82-83 |
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YBCO HTS HEB |
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Dubna |
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Joint Inst. for Nuclear Research, Dubna (Russian Federation); 296 p; 1994; p. 82-83; 30. Conference on low-temperature physics; 30. Soveshchanie po fizike nizkikh temperatur; Dubna (Russian Federation); 6-8 Sep 1994 |
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Неравновесный и болометрический отклик YBaCuO пленок в резиотивном состоянии на инфракрасное лазерное излучение малой интенсивности |
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Karasik, B.S.; Milostnaya, I.I.; Zorin, M.A.; Elantev, A.I.; Gol'tsman, G.N.; Gershenzon, E.M. |
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Subnanosecond S-N and N-S switching of YBCO film induced by current pulse |
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Journal Article |
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1994 |
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Phys. C: Supercond. |
Abbreviated Journal |
Phys. C: Supercond. |
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235-240 |
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1981-1982 |
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YBCO HTS switches |
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A transition of YBCO bridge 60 nm thick from superconducting to normal state induced by an abrupt current step has been studied. A subnanosecond stage has been observed during both S-N and N-S transition. The data obtained can be explained by hot-electron phenomena. On the basis of experimental results a prediction of picosecond switch performance has been made. |
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0921-4534 |
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1633 |
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Gol'tsman, G. N.; Kouminov, P.; Goghidze, I.; Gershenzon, E. M. |
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Nonequilibrium kinetic inductive response of YBaCuO thin films to low-power laser pulses |
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Journal Article |
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1994 |
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Phys. C: Supercond. |
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Phys. C: Supercond. |
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235-240 |
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1979-1980 |
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YBCO HTS KID |
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Transient non-equilibrium kinetic inductive voltage response of YBaCuO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 μm and 1.5 μm wavelength has been revealed. By increasing the sensitivity of 100 ps resolution time registration system and diminishing light intensity (fluence 0.1-1 μJ2/cm2) and transport current (density j≤105 A/cm2) we observed a perculiar bipolar signal form with nearly equal amplitudes of each sign. The integration of the kinetic inductive response over time gives the result which is qualitatively of the same form as the response in the resistive and normal states: nonequilibrium picosecond scale component followed by bolometric nanosecond. Nonequilibrium response is interpreted as suppression of order parameter by excess of quasiparticles followed by a change in resistance in the resistive state and kinetic inductance in superconductive state. |
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0921-4534 |
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