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Kerr, A. R. |
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Some fundamental and practical limits on broadband matching tocapacitive devices, and the implications for SIS mixer design |
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1995 |
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IEEE Trans. Microw. Theory Techn. |
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43 |
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1 |
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2-13 |
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256 |
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de Lange, G.; Kuipers, J. J.; Klapwijk, T. M.; Panhuyzen, R. A.; van de Stadt, H.; de Graauw, M. W. M. |
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Superconducting resonator circuits at frequencies above the gap frequency |
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1995 |
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J. Appl. Phys. |
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77 |
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4 |
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1795-1804 |
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257 |
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Hesler, J. L.; Crowe, T. W.; Bradley, R. F.; Pan, S. K.; Chattopadhyay, G. |
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The design, construction and evaluation of a 585 GHz planar Schottky mixer |
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1995 |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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34-43 |
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Pasadena, Ca |
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259 |
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Krasnosvobodtsev, S. I.; Shabanova, N,P.; Ekimov, E.V.; Nozdrin, V.S.; Pechen, E,V. |
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Title |
Critical magnetic field of NbC: new data on clean superconductor films |
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1995 |
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Zh. Eks. Teor.Fiz. |
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534-537 |
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The temperature dependence of the upper critical magnetic fields of exceptionally low-defect-density films of the superconducting compound NbC has been investigated, and previously unknown parameters of this clean superconductor and its electronic characteristics have been evaluated. An electron density of states at the Fermi level equal to 1.3 states/ eV. Nb atom, a Fermi velocity equal to 2.2X lo7 cmls, a plasma frequency equal to 3.6 eV, and a coherence length to 24 nm have been obtained with an electron mean free path exceeding 40 nm. A vortex-free state existing over the entire temperature range below T, which causes a many-fold increase in the critical magnetic field of the films when the field is aligned parallel to their surface, has been discovered in very thin films of superconducting niobium carbide. |
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RPLAB @ atomics90 @ |
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956 |
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Ekstrom H.; Karasik B. S.; Kollberg E.L.; Yngvesson K.S. |
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Conversion Gain and Noise of Niobium Superconducting Hot-Electron-Mixers |
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1995 |
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IEEE Trans. Microw. Theory Techn. |
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43 |
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938-947 |
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A study has been done of microwave mixing at 20 GHz using the nonlinear (power dependent) resistance of thin niobium strips in the resistive state. Our experiments give evidence that electron-heating is the main cause of the nonlinear phenomenon. Also a detailed phenomenological theory for the determination of conversion properties is presented. This theory is capable of predicting the frequency-conversion loss rather accurately for arbitrary bias by examining the I-V-characteristic. Knowing the electron temperature relaxation time, and using parameters derived from the I-V-characteristic also allows us to predict the -3-dB IF bandwidth. Experimental results are in excellent agreement with the theoretical predictions. The require ments on the mode of operation and on the film parameters for minimizing the conversion loss (and even achieving conversion gain) are discussed in some detail. Our measurements demon-strate an intrinsic conversion loss as low as 1 dB. The maximum IF frequency defined for -3-dB drop in conversion gain, is about 80 MHz. Noise measurements indicate a device output noise temperature of about 50 K and SSB mixer noise temperature below 250 K. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies. |
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RPLAB @ atomics90 @ |
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964 |
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