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Author Hesler, J. L.; Hall, W. R.; Crowe, T. W.; Weikle, R. M.; Bradley, R. F.; Pan, Shing-Kuo
Title Submm wavelenght waveguide mixers using planar Schottky barier diods Type Conference Article
Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages (up) 462
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Notes Approved no
Call Number Serial 270
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Author Ellison, B. N.; Maddison, B. J.; Matheson, D. N.; Oldfield, M. L.; Marazita, S.; Crowe, T. W.; Maaskant, P.; Kelly, W. M.
Title First results for a 2.5 THz Schottky diode waveguide mixer Type Conference Article
Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 7th Int. Symp. Space Terahertz Technol.
Volume Issue Pages (up) 494
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Corporate Author Thesis
Publisher Place of Publication Charlottesville, Virginia, USA Editor
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Notes Approved no
Call Number Serial 265
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Author Betz, A. L.; Borejko, R. T.
Title A practical Schottky mixer for 5 THz Type Conference Article
Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages (up) 503
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Notes Approved no
Call Number Serial 269
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Author van de Stadt, H.
Title An improved 1 THz waveguide mixer Type Conference Article
Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages (up) 536
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Corporate Author Thesis
Publisher Place of Publication Charlottesville, Virginia, USA Editor
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Notes Probably other authors exist. Approved no
Call Number Serial 263
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Author Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
Title Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions Type Journal Article
Year 1996 Publication Surface Science Abbreviated Journal Surface Science
Volume 361-362 Issue Pages (up) 569-573
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
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ISSN 0039-6028 ISBN Medium
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Notes Approved no
Call Number Serial 1609
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